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Monitoring coupon and monitoring method for ion implantation technique

A technology of ion implantation and ion implantation energy, which is applied in the field of monitoring test strips of ion implantation process, can solve the problems of difficult monitoring of ion implantation process and complicated production, and achieve the effects of improving repeatability and accuracy, simple implementation and convenient operation

Inactive Publication Date: 2008-08-20
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

Using the wafer for evaluation to monitor the ion implantation process can monitor the distribution of the ion implantation amount in the substrate in detail, which improves the monitoring level of the ion implantation process to a certain extent. However, the wafer for evaluation is complicated to manufacture and requires many The first-step process is completed, and it cannot solve the above-mentioned problem that is difficult to monitor when realizing the shallow junction ion implantation process

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  • Monitoring coupon and monitoring method for ion implantation technique
  • Monitoring coupon and monitoring method for ion implantation technique
  • Monitoring coupon and monitoring method for ion implantation technique

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Embodiment Construction

[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] The processing method of the present invention can be widely applied in many applications, and can utilize many suitable materials to make, and below is to illustrate by preferred embodiment, certainly the present invention is not limited to this specific embodiment, this field Common replacements known to those skilled in the art undoubtedly fall within the protection scope of the present invention.

[0038] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, which should not be used...

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Abstract

The invention discloses a monitoring test piece for ion implantation process, comprising a underlay having the a impurity type contrary to that of the ion implantation process to be monitored, besides, the underlay is provided with a pre-doped layer having a same impurity type as that of the ion implantation process to be monitored, the thickness of the pre-doped layer is more than the implantation depth of the ion implantation process to be monitored. The monitoring method of the ion implantation process is realized by the monitoring test chip, by which the problem that current shallow junction ion implantation process is difficult to be monitored is solved, and the monitoring to the shallow junction ion implantation process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a monitoring test piece and a monitoring method for an ion implantation process. Background technique [0002] The ion implantation process is a process technology that changes the electrical properties of the substrate by introducing a controllable amount of impurities into the substrate. It is widely used in the modern semiconductor manufacturing process. In the ion implantation process, in order to ensure that the impurity-implanted substrate achieves predetermined electrical properties, there are strict requirements on the implanted impurity concentration and depth. Therefore, real-time monitoring of the ion implantation process is usually required. [0003] The existing monitoring of the ion implantation process is realized by using a monitoring test piece. After the ion implantation is completed, the corresponding annealing treatment is performed on the ...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/66H01L21/265H01J37/317
Inventor 朱津泉戴树刚
Owner SEMICON MFG INT (SHANGHAI) CORP
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