Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory

A technology of a magnetoresistive device and a magnetic head, applied in the field of magnetoresistive devices, can solve the problems of insufficient sensitivity of magnetoresistive change, and achieve the effect of improving the output level

Inactive Publication Date: 2008-08-27
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, if the read gap is further reduced as the recording density increases in the future, even if the above materials are used in the magnetization free layer or the magnetization pinned layer, the sensitivity to magnetoresistance changes will be insufficient.

Method used

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  • Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
  • Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory
  • Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory

Examples

Experimental program
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Effect test

no. 1 example

[0035] FIG. 1 is a schematic diagram showing a cross-sectional structure of a hybrid magnetic head 10 according to a first embodiment of the present invention. The magnetic head 10 includes a magnetoresistive device 20 and an inductive writing device 13 . Arrow X indicates the direction of movement of the magnetic recording medium (not shown) toward the magnetoresistive device. The magnetoresistive device 20 is formed on a flat ceramic (such as Al 2 o 3 -TiC) on the substrate 11. The inductive writing device 13 is formed on the magnetoresistive device 20 .

[0036] The inductive writing device 13 comprises a top magnetic pole 14, a bottom magnetic pole 16 and a write gap layer 15, the width of the top magnetic pole 14 corresponds to the track width of the facing magnetic recording medium, the bottom magnetic pole 16 extends parallel to the top magnetic pole 14, The write gap layer 15 is formed of a non-magnetic material, interposed between the top magnetic pole 14 and the ...

no. 2 example

[0101] 10 is a schematic cross-sectional view of a magnetoresistance effect film used in a magnetic head according to a second embodiment of the present invention. In the second embodiment, a tunnel magnetoresistive film (hereinafter referred to as a TMR film) is used for the magnetoresistive device instead of the GMR film of the first embodiment, and other structures and configurations are the same as those of the first embodiment. Therefore, the description of the magnetic head is omitted here.

[0102] 10 to 15 show structural examples 1-6 of the TMR film used in the magnetoresistive device 20 of the second embodiment. The TMR films 70, 71, 72, 73, 74A and 74B has the same structure as the GMR films 30 , 40 , 50 , 60 , 65A, and 65B shown in FIGS. 2-7 .

[0103] The non-magnetic insulating layers 37 a and 47 a both have a film thickness of, for example, 0.2 nm to 2.0 nm, and are both formed of an oxide of a substance selected from the group consisting of Mg, Al, Ti, and Zr...

no. 3 example

[0109] 16 is a plan view of a magnetic storage device according to a third embodiment of the present invention. A housing 91 of a magnetic storage device 90 accommodates therein a hub 92 driven by a spindle (not shown), a magnetic recording medium 93 fixed on the hub 92 and rotated by the hub, an actuator unit 94 , a suspension 96 supported by the actuator unit 94 and driven in the radial direction of the magnetic recording medium 93 , and a magnetic head 98 supported by the suspension 96 .

[0110] The magnetic recording medium 93 may be an in-plane magnetic recording type or a perpendicular magnetic recording type, and may be a recording medium having tilt anisotropy. The magnetic recording medium 93 is not limited to a magnetic disk, and may be a magnetic tape.

[0111] The magnetic head 98 includes a magnetoresistive device 20 and an inductive writing device 13 formed on a ceramic substrate 11 as shown in FIG. 1 . The inductive writing device 13 may be a ring type for in...

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Abstract

A CPP-type magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, and a non-magnetic layer provided between the magnetization pinned layer and the magnetization free layer. At least one of the magnetization free layer and the magnetization pinned layer is formed of CoFeGe, and the CoFeGe has a composition falling within a range defined by line segments connecting coordinate points A, B, C, and D in a ternary composition diagram where the point A is (42.5, 30, 27.5), the point B is (35, 52.5, 12.5), the point C is (57.5, 30.0, 12.5), and the point D is (45.0, 27.5, 27.5), and where each of the coordinate points is represented by content percentage of (Co, Fe, Ge) expressed by atomic percent (at. %).

Description

technical field [0001] The present invention relates to a magneto-resistive device for reproducing information in a magnetic recording medium or a storage device, in particular to a current perpendicular to the plane (CPP) magneto-resistive device, wherein the sensing current is in the direction perpendicular to the multilayer plane flow up. Background technique [0002] In recent years, a giant magnetoresistance (GMR) device has been used as an information reproducing device of a magnetic head in a magnetic storage device to reproduce information in a magnetic recording medium. GMR devices exploit the giant magnetoresistance effect, where an external magnetic field causes a change in resistance. When reproducing information of a magnetic recording medium, a change in direction of a magnetic field leaked from the magnetic recording medium is detected by the GMR device and converted into a change in resistance. With the development of high-density recording technology, magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H01F10/32H01F10/16G11B5/39G11C11/16G11C11/15
CPCB82Y10/00B82Y25/00G11B5/3929G11B2005/3996G06K19/07732G06F2213/0042
Inventor 城后新清水丰
Owner FUJITSU LTD
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