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Pixel structure and transistor therein and method for making the same

A technology of pixel structure and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., and can solve problems such as high cost and complicated process

Inactive Publication Date: 2010-06-30
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, four to six mask processes are quite complex and costly

Method used

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  • Pixel structure and transistor therein and method for making the same
  • Pixel structure and transistor therein and method for making the same
  • Pixel structure and transistor therein and method for making the same

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Embodiment Construction

[0030] The invention provides a pixel structure in a panel of a liquid crystal display device and a manufacturing method thereof, as well as a thin film transistor structure in the pixel structure and a manufacturing method thereof. The thin film transistor in the present invention can be, for example, an amorphous silicon thin film transistor (a-Si Thin-Film-Transistor, a-Si TFT), or a polysilicon thin film transistor (p-Si TFT), or other similar semiconductor circuit components .

[0031] figure 1 Shown is a schematic flow chart of manufacturing the pixel structure 100 in an embodiment of the present invention. In step 1001 , a substrate 10 is provided, and the substrate 10 has a transistor region 207 , a scanning wiring region 201 , a data wiring region 203 , an interleaving region 205 and a pixel electrode region 209 (not shown). The substrate 10 is preferably a glass substrate formed of glass; however, in different embodiments, the substrate 10 may also be a polymer sub...

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PUM

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Abstract

The invention provides a pixel structure, a transistor in the pixel structure and a manufacturing method thereof. The method at least comprises the steps that: a first conductor layer, an insulating layer, a first semiconductor layer and a contact layer are deposited and a first mask technology is carried out to form a transistor area, a scanning wiring area, a data wiring area, a staggered area and a pixel electrode area; a second mask technology is carried out to lead the first conductor layer in the scanning wiring area to be at least partially exposed outside. A transparent conducting layer and a second conductor layer are sequentially deposited on the transistor area, the scanning wiring area, the data wiring area, the staggered area and the pixel electrode area, wherein, the second conductor layer is positioned above the transparent conducting layer; then, a third mask technology is carried out to lead the transistor area to form a grid, a grid insulating layer, a channel layer,an ohm contact layer and a source / drain electrode of the transistor, wherein, the channel layer is partially exposed outside.

Description

technical field [0001] The present invention relates to a pixel structure in a panel of a liquid crystal display device and a manufacturing method thereof; specifically, the present invention relates to a transistor structure in a pixel structure and a manufacturing method thereof. Background technique [0002] The display panel and the panel display device using the display panel have gradually become the mainstream of various display devices. For example, various panel display screens, flat-screen TVs for home use, flat-panel monitors for personal computers and laptop computers, display screens for mobile phones and digital cameras, etc., are all products that use a large number of display panels. In particular, a thin film transistor liquid crystal display panel (TFT LCD) is currently a widely used product. [0003] Generally speaking, increasing the aperture ratio is one of the important goals to be achieved in the improvement research of the thin film transistor liquid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/84H01L21/768H01L21/336H01L27/12H01L23/522H01L29/786G02F1/1368
Inventor 游伟盛陈建宏
Owner AU OPTRONICS CORP