Semiconductor device and method for fabricating the same

Abstract

A semiconductor device comprises a fin-type active region defined by a semiconductor substrate having a device isolation structure, a recess formed over the fin-type active region, and a gate electrode including a silicon germanium (Si1-xGex) layer for fill the recess (where 0<X<1 and X is a Ge mole fraction).

Description

technical field [0001] The present invention generally relates to a semiconductor device. More particularly, the present invention relates to a semiconductor device including a fin transistor and a method of manufacturing the same. Background technique [0002] In Fin Channel Array Transistor (FCAT), the fin channel transistor has a three-dimensional structure in which a channel is surrounded by a tri-gate. Existing fabrication techniques can be used to fabricate the fin-like channel structure. The fin-shaped channel structure has a larger surface area to reduce the short channel effect between the drain region and the source region. The fin-shaped channel structure allows lower channel doping concentration, which reduces leakage current through the junction region. [0003] The lower gate electrode of the fin channel transistor includes a p+ polysilicon layer. The work function of the p+ polysilicon layer is greater than that of the p- silicon substrate. Taking the DRA...

AI Technical Summary

Problems solved by technology

Taking the DRAM cell as an example, when the fin-pass transistor is turned off with a binary "1" voltage in the drain region, the phenomenon of gate-induced drain leakage ("GIDL") results in a Leakage current increases

Then, the data retention performance ("1" in this case) of the DRAM cell is lowered, which degrades the refresh characteristic of the DRAM

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