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Image element structure and production method of display panel

A technology of pixel structure and display panel, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of decreasing aperture ratio and affecting display effect, and can increase aperture ratio, reduce occupied area, and improve capacitance. Effect

Active Publication Date: 2008-10-29
AU OPTRONICS CORP
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Problems solved by technology

[0003] From the above, it can be known that the storage capacitor Cst of the pixel structure of the known liquid crystal display panel is formed by the overlapping portion of the drain electrode 28 and the common electrode 30. Therefore, if the capacitance needs to be increased, the drain electrode 28 and the common electrode must be increased. 30 overlapping area, but this will cause the aperture ratio to drop and affect the display effect

Method used

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  • Image element structure and production method of display panel
  • Image element structure and production method of display panel
  • Image element structure and production method of display panel

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Embodiment Construction

[0036] In order to enable those who are familiar with the technical field of the present invention to further understand the present invention, several preferred embodiments of the present invention are enumerated below, and in conjunction with the attached drawings, the constitutional content and intended achievement of the present invention are described in detail. effect.

[0037] Please refer to Figure 2a , Figure 2b , Figure 3 and Figure 4. Figure 2a , Figure 2b , FIG. 3 and FIG. 4 are schematic diagrams of a preferred embodiment of the pixel structure of the display panel of the present invention, wherein Figure 2a and Figure 2b They are the top views of the two implementation states of the pixel structure of this embodiment, and Fig. 3 and Fig. 4 are respectively the Figure 2a and Figure 2b The cross-sectional schematic diagram of the section lines AA' and BB'; in addition, each embodiment of the present invention uses the pixel structure of the liquid crystal...

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Abstract

The invention relates to a pixel structure of a display panel and a manufacture method thereof. The structure comprises a substrate, a first layer conductive pattern arranged on the substrate; a first insulation layer arranged on the first layer conductive pattern and the substrate, wherein, the first insulation layer is provided with at least two first openings which expose part of the two first common electrode patterns respectively; a semiconductor layer which is arranged on the first insulation layer and corresponds to the gate; a second conductive pattern which is arranged on the semiconductor layer and the first insulation layer; and a pixel electrode which is arranged on the second insulation layer, wherein, the electrode pattern and the second common electrode pattern compose a second storage capacitance. By using the pixel electrode and the common electrode pattern to compose the first storage capacitance and using the electrode pattern and the common electrode pattern to compose the second storage capacitance, the structure can greatly increase capacitance without influencing the aperture ratio.

Description

technical field [0001] The present invention relates to a pixel structure of a display panel and a manufacturing method thereof, in particular to a pixel structure of a display panel with two storage capacitors composed of three layers of electrodes and a manufacturing method thereof. Background technique [0002] In order to maintain the charge input to the pixel electrode until the next scan, a storage capacitor must be provided in the pixel structure of the liquid crystal display panel to increase the capacitance. Please refer to Figure 1. FIG. 1 is a schematic diagram of a pixel structure of a known liquid crystal display panel. As shown in FIG. 1 , the pixel structure 10 includes a substrate 12 on which a TFT region 14 and a pixel region 16 are defined. A thin film transistor is disposed in the thin film transistor region 14 , which includes a gate 18 , a gate insulating layer 20 , a semiconductor layer 22 , a heavily doped semiconductor layer 24 , a source 26 , and a...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L21/84G02F1/1362
CPCH01L27/1255
Inventor 黄德群黄国有林祥麟
Owner AU OPTRONICS CORP
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