Process for measuring temperature of reaction chamber of vapor deposition equipment

Abstract

The invention provides a method for measuring the temperature of a reaction chamber of a vapor deposition device. The temperature of the reaction chamber is measured by arranging temperature detecting units inside and outside the reaction chamber respectively in the prior art, which has the problems of cost waste, incorrect measurement and hidden danger. The invention provides a temperature measuring method which includes that: an inner temperature detecting unit and an outer temperature detecting unit are respectively arranged inside and outside the reaction chamber of the vapor deposition device; then the temperature of the vapor deposition device is changed to cover the permitted temperature range of the vapor deposition device; then the temperature detected by the inner and outer temperature detecting units is read and the temperature deviation value of the inner temperature and the outer temperature is calculated; then the inner temperature detecting unit is dismounted, vapor deposition is carried out again by the vapor deposition device, and then the temperature detected by the outer temperature detecting unit is read; finally, the temperature of the reaction chamber of the vapor deposition device is calculated according to the temperature deviation value and the temperature detected by the outer temperature detecting unit. The method of the invention can measure the temperature of the reaction chamber safely and accurately with low cost.

Description

Technical field [0001] The invention relates to a temperature measurement technology, in particular to a method for measuring the temperature of a reaction chamber of a vapor deposition equipment. Background technique [0002] In the field of semiconductor manufacturing, many processes require chemical vapor deposition to generate an insulating or shielding oxide layer, polycrystalline layer or nitride layer. The above chemical vapor deposition is carried out in the corresponding chemical vapor deposition equipment. The vapor deposition equipment reaction chamber The internal temperature is an important parameter in the vapor deposition process, which affects the thickness and quality of the resulting film. [0003] In order to accurately detect the temperature of the vapor deposition equipment, an internal and external temperature detection unit is usually installed inside and outside the reaction chamber. The internal and external temperature detection units are thermocouples w...

AI Technical Summary

Problems solved by technology

The internal thermocouple should be able to more accurately reflect the temperature of the vapor deposition equipment because it is set in the reaction chamber. However, during vapor deposition, a thin film will be deposited on the surface of the internal thermocouple, which will affect the accuracy of the temperature measurement of the internal thermocouple. Certain influence, but what is more serious is that when the vapor deposition equipment prepares the arsenic-doped polycrystalline film, when the film thickness is too thick or the temperature of the vapor deposition equipment changes sharply, the arsenic-containing polycrystalline film on the surface of the internal thermocouple and the quartz The deformation coefficient of the casing varies greatly, so the shrinkage of the arsenic-containing polycrystalline film will cause the quartz casing to break, so that the fragments of the quartz casing will damage the wafer being chemically vapor deposited, resulting in huge economic loss

[0004] Therefore, how to provide a temperature measurement method to avoid cost waste, inaccurate temperature measurement and safety threats caused by installing a temperature detection unit inside the reaction chamber has become an urgent technical problem in the industry.

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