Polycrystalline silicon film resistance value test method
A test method, polysilicon technology, applied in semiconductor/solid-state device testing/measurement, etc., can solve problems such as long duration, increased cost, and unsatisfactory demand, so as to improve production efficiency and reduce production loss.
Active Publication Date: 2011-04-20
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0005] However, as the precision requirements of products are getting higher and higher, it is obvious that only relying on measuring the thickness of the polysilicon film on the control chip to judge the change of the resistance value of the future gate can no longer meet the needs of current products.
The existing process usually meets the requirements for measuring the thickness of the polysilicon film. However, after the subsequent process of the polysilicon film grown according to the reaction conditions is completed, the resistance value of the polysilicon gate usually does not reach the ideal range.
This process lasts for a long time, so it affects the yield of the product and increases the cost of production
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[0010] The present invention accurately tests whether the resistance value of the polysilicon film grown under the reaction conditions of the furnace tube meets the requirements of production specifications by controlling the film, and the method includes the following steps:
[0011] First put the control piece into the furnace tube for reaction to grow a layer of polysilicon film on the control piece, and then take out the control piece to measure whether the polysilicon film thickness, flatness, particle amount and other parameters meet the requirements.
[0012] On the premise that other parameters of the polysilicon film meet the requirements, the ion implantation process is performed on the control panel, that is, boron ions are implanted on the surface of the control panel; boron ions are introduced into the control panel by high-voltage ion bombardment, and the Designate the area to obtain the desired electrical characteristics. At the same time, due to the impact of h...
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The invention provides a test method for polysilicon membrane resistance value, which comprises the following steps: a, placing a control wafer in a furnace tube to act to generate a layer of polysilicon membrane on the control wafer; b, performing the following steps to the control wafer, b1, executing a boron ions implantation process to the control wafer, b2, activating boron ions through fast heating process, b3 measuring the resistance value finally, if the resistance value meets requirements upon production specification and then the wafer can be sent in the furnace tube for growing of polysilicon membrane. Compared with the prior art, electrical characteristics are obtained by executing ion implantation process and fast heating process on the control wafer, weather the resistance value of polysilicon membrane produced in acting condition of the furnace tube meets the requirements upon production specifications can be learned, thereby production loss can be reduced to the minimum and production efficiency can be increased effectively.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for testing the resistance of a polysilicon film. Background technique [0002] Transistor structure can be divided into bipolar type (bipolar) and MOS (Metal-Oxide-Semiconductor) type. The operation speed of the bicarrier type IC is fast, but the power consumption is large, and the manufacturing process is also complicated. It is not the mainstream of VLSI, and the MOS type is formed by integrating power plant effect transistors (FETs). After forming an insulating oxide film on the silicon, an electric field is added to the external electrode (metal or polysilicon) on it to control its action. The process is relatively simple and consumes less power. P-MOS was the first to become practical, but Its operating speed is relatively slow, and soon higher-speed N-MOS is also adopted. Once entering the field of VLSI, due to the advantages of faster speed and less powe...
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IPC IPC(8): H01L21/66
Inventor 董智刚陆肇勇范建国黄柏喻
Owner SEMICON MFG INT (SHANGHAI) CORP