Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Mask plate and matching method of photo-etching machine nesting precision using mask plate

A technology of overlay accuracy and mask plate, which is applied in the field of overlay accuracy matching, can solve problems affecting the production efficiency of lithography machines, and achieve the effect of saving matching time and improving product yield

Active Publication Date: 2008-12-03
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using existing methods and existing reticles seriously affects the production efficiency of lithography machines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] Embodiments of the present invention are described below, so that the purpose, specific structural features and advantages of the invention can be further understood.

[0010] The invention provides a new reticle, the reticle has multiple types of alignment marks, and different types of alignment marks are located at different positions of the reticle to match with different alignment systems. The type of manufacturing reticle alignment mark is determined according to its scope of use. For example, if the wafer to be processed is divided into three types according to the lithography machine used for the front-end process, since different types of lithography machines have different types of alignment system and alignment method, therefore, three types of alignment marks that match the alignment marks on the wafer need to be etched on the reticle of the present invention. With this type of reticle, there is no need to replace the photolithography machine and the reticle ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a mask used for lithography process and a matching method used for debugging the alignment precision of a lithography machine by adopting the mask, relating to the semiconductor field. The mask provided by the invention is provided with two or more than two different alignment marks. The lithography machine adopting the mask is provided with an alignment system module and a correction alignment system control module which are matched with the alignment marks of the mask. When the alignment precision is debugged, an alignment system module matched with a wafer alignment mark is started according to the alignment mark of a test wafer to align the matched alignment marks of the mask for lithography; a matching test is carried out for the lithography graph, and if the alignment precision cannot meet the specification, the data of the correction alignment system control module is adjusted; the matching test is carried out circularly till the alignment precision reaches the specification. Compared with the prior art, the invention can effectively shorten debugging period and enhance the finished-product rate.

Description

technical field [0001] The invention relates to the manufacturing technology in the field of semiconductors, in particular to a reticle used in a photolithography process and a method for matching the overlay accuracy of a photolithography machine using the reticle. Background technique [0002] Wafer manufacturing includes front-end process (Front end offline, FEOL) and back-end process (Backend offline, BEOL). In order to improve production efficiency or be limited by the company's own hardware conditions, some companies (hereinafter referred to as "providers") only perform pre-process processes on wafers to make semi-finished products, while some companies (hereinafter referred to as "manufacturers") buy other The semi-finished products of the enterprise are processed into finished products through the post-stage process. Different suppliers often use different types of lithography machines in the front-end process of wafers. The alignment methods and alignment marks of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F7/20G03F9/00H01L21/027G03F1/42
Inventor 朱文渊杨晓松
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com