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Method for depositing thin film using high density plasma chemical vapor deposition

A thin-film, high-frequency technology used in the deposition of thin films to address issues such as increased trench aspect ratios, narrowed trench entrances, and narrowed design rules

Inactive Publication Date: 2008-12-24
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, since the design rules of semiconductor devices are narrowed below 60nm, the aspect ratio of the trench is increased and the entrance of the trench is narrowed
Therefore, conventional methods cannot be used to completely fill the interior of trenches with high aspect ratios

Method used

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  • Method for depositing thin film using high density plasma chemical vapor deposition
  • Method for depositing thin film using high density plasma chemical vapor deposition
  • Method for depositing thin film using high density plasma chemical vapor deposition

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Embodiment Construction

[0021] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. These examples are provided for illustrative purposes only and to enable those skilled in the art to fully understand the scope of the present invention. In the drawings, the same reference numerals are used to designate the same elements throughout.

[0022] figure 1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention. figure 2 is a layout diagram of the antenna according to this embodiment. image 3 is a layout diagram of an antenna according to a modification of this embodiment.

[0023] Figure 4 with 7 is a view illustrating a method of depositing a thin film according to this embodiment. Figure 8 is a view explaining a method of applying plasm...

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Abstract

The invention relates to a film deposition method using high density plasma chemical vapor deposition. The film deposition method comprises: loading a semiconductor liner with clearance above in a chamber; supplying process gases in the chamber and plasma processing the process gas using high frequency and low frequency source power; filling the clearance with plasma processed process gas; and unloading the filled semiconductor liner outside the cavity. The high frequency source power and the low frequency source power are independently applied. Thus the high frequency source power generates plasma at low pressure, and the low frequency source power generates high density plasma. Thus the clearance of the semiconductor liner with high aspect ratio can be effectively filled by HDPCVD technique.

Description

technical field [0001] The present invention relates to a method of depositing thin films, and more particularly to a deposition that can be used to fill narrow gaps of 60 nm or less in high density chemical vapor deposition by applying source power with at least two different frequencies thin film method. Background technique [0002] Device isolation films used in conventional semiconductor devices are used to electrically isolate devices from each other. For this purpose, a device isolation film is manufactured by forming a trench in a semiconductor substrate and filling the trench with an insulating material. [0003] However, since the design rule of the semiconductor device is narrowed below 60 nm, the aspect ratio of the trench is increased and the entrance of the trench is narrowed. Therefore, conventional methods cannot be used to completely fill the interior of trenches having a high aspect ratio. Contents of the invention [0004] Accordingly, the present inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/513
CPCC23C16/517H01J37/321H01J37/32165
Inventor 韩政勋
Owner JUSUNG ENG