Barium titanate based magnetic thin film material and preparation method thereof

A technology of magnetic thin film and thin film material, which is applied in the field of material science and can solve problems such as having no application value

Inactive Publication Date: 2009-01-14
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The magnetic semiconductor materials that have been studied in the early stage, such as the chalcogenides of europium (Eu), have no practical application value because the Curie temperature is much lower than room temperature.

Method used

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  • Barium titanate based magnetic thin film material and preparation method thereof
  • Barium titanate based magnetic thin film material and preparation method thereof
  • Barium titanate based magnetic thin film material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0032] Example 1: Weigh an appropriate amount of barium carbonate, titanium dioxide, and manganese carbonate powder according to the formula in Table 1, add an appropriate amount of alcohol, take it out after ball milling in a ball mill for 12 hours, and dry the alcohol in an oven at 80°C. Then, put the dried mixed powder into a high-temperature furnace at 1000°C to pre-fire the phase to form BTO powder. Add PVA with a concentration of 1% to the pre-fired powder to granulate, sieve after granulation, press into a disc with a diameter of 20 mm, and sinter at a high temperature of 1300 ° C. The temperature and time process parameters are shown in Table 4. A BTO target with Mn doping amount of 0.5% was obtained.

[0033] After preparing the target, pulsed laser deposition (PLD) was used to deposit the SrTiO 3 Thin films are deposited on the substrate, and the laser is a KrF (λ=248nm) excimer laser. During the deposition process, the laser energy density is kept at 1.5J / cm 2 , t...

Embodiment 2

[0034] Example 2: Weigh an appropriate amount of barium carbonate, titanium dioxide, and manganese carbonate powder according to the formula in Table 2, add an appropriate amount of alcohol, ball mill it in a ball mill for 12 hours, take it out, and put it into an oven at 80°C to dry the alcohol. Then, put the dried mixed powder into a high-temperature furnace at 1000°C to pre-fire the phase to form BTO powder. Add PVA with a concentration of 1% to the pre-fired powder to granulate, sieve after granulation, press into a disc with a diameter of 20 mm, and sinter at a high temperature of 1300 ° C. The temperature and time process parameters are shown in Table 4. A BTO target with Mn doping amount of 1.0% was obtained.

[0035] After preparing the target, pulsed laser deposition (PLD) was used to deposit the SrTiO 3 Thin films are deposited on the substrate, and the laser is a KrF (λ=248nm) excimer laser. During the deposition process, the laser energy density is kept at 1.5J / cm...

Embodiment 3

[0036] Example 3: Weigh an appropriate amount of barium carbonate, titanium dioxide, and manganese carbonate powder according to the formula in Table 1, add an appropriate amount of alcohol, ball mill in a ball mill for 12 hours, take it out, and put it into an oven at 80°C to dry the alcohol. Then, put the dried mixed powder into a high-temperature furnace at 1000°C to pre-fire the phase to form BTO powder. Add PVA with a concentration of 1% to the pre-fired powder to granulate, sieve after granulation, press into a disc with a diameter of 20 mm, and sinter at a high temperature of 1300 ° C. The temperature and time process parameters are shown in Table 4. A BTO target with Mn doping amount of 3.0% was obtained.

[0037] After preparing the target, pulsed laser deposition (PLD) was used to deposit the SrTiO 3 Thin films are deposited on the substrate, and the laser is a KrF (λ=248nm) excimer laser. During the deposition process, the laser energy density is kept at 1.5J / cm 2...

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Abstract

The invention relates to a barium-titanate based magnetic film material and a preparation method thereof, belonging to the field of magnetic film material. The barium-titanate based magnetic film material is characterized in that the film material takes BaTiO3 film as a substrate where transition group metallic element ions are mixed; the mol ratio of the film material is 95 to 99.5 percent of Ti and 0.5 to 5 percent of transition-metal ions. The preparation method of the invention adopts a pulse laser deposition method (PLD) and prepares the BaTiO3 film mixed with transition group metallic ions (such as Mn and Co, etc.) on a SiTiO3 single-crystal substrate so as to gain the ferroelectric / ferromagnetic film under room temperature. By changing the types and mixing quantity of the mixed transition group metal, the deposition time and controlling the thickness of the film, the ferroelectric and ferromagnetic adjustment under room temperature can be realized. The method of the invention has the advantages of simple equipment, easy control, strong repeatability, being applicable for preparing the multifunctional magnetic film material, etc., and being expected to play an important role in the electronic devices of the novel fields such as spintronics, etc.

Description

technical field [0001] The invention belongs to the field of material science, and mainly relates to a novel BaTiO with room temperature ferroelectricity and ferromagnetism 3 (hereinafter referred to as BTO) based magnetic thin film material and preparation method thereof. Background technique [0002] Diluted magnetic semiconductor (DMS) thin film materials have excellent magnetic, magneto-optical, and magnetoelectric properties due to the use of the charge and spin properties of electrons at the same time, making them ideal for magnetic sensors, high-density memories, optical isolators, and semiconductor lasers, especially Therefore, the field of spintronics has broad application prospects and has become a new research hotspot in the field of materials. Based on this, the development of high-performance spintronic devices based on the charge and spin characteristics of electrons at the same time, it has the advantages of fast speed, small size, low energy consumption, etc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/28H01F41/14C23C14/28
Inventor 林元华南策文张嵩印
Owner TSINGHUA UNIV
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