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Radio frequency power amplifier circuit

A technology for amplifier circuits and amplifier circuits, applied in power amplifiers, high-frequency amplifiers, improved amplifiers to reduce temperature/power supply voltage changes, etc., can solve the problems of power amplifier output characteristics changes, limited temperature compensation, etc., to reduce dependence , Enhance temperature compensation, improve stability and applicability

Active Publication Date: 2009-03-25
RDA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, this structure has no effect on the bias voltage V BIAS The change is very sensitive, and the compensation for temperature is limited. When the bias voltage fluctuates, it will cause a large change in the output characteristics of the power amplifier.

Method used

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Embodiment Construction

[0013] The radio frequency power amplifier circuit of the present invention has a circuit diagram such as figure 2 As shown, it includes a bias circuit and an amplifying circuit, the amplifying circuit includes an NPN tube Q3, the emitter of the NPN tube Q3 is grounded, and the base of the NPN tube Q3 passes through a capacitor C in Connect the input signal, the collector of the NPN tube Q3 is connected to the power supply terminal V CC , At the same time through a capacitor C out Then as a signal output terminal, it is characterized in that the bias circuit includes three NPN tubes Q4, Q5 and Q6, and the collector of the NPN tube Q4 passes through two resistors R2 and a compensation resistor R connected in series. X1 Connect to voltage bias terminal V BIAS , The base of the NPN tube Q4 is connected to the compensation resistor R X1 The end connected to the resistor R2, the emitter of the NPN tube Q4 is connected to the collector of the NPN tube Q5, the base of the NPN tube Q5 is...

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PUM

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Abstract

The invention discloses a circuit of a radio-frequency power amplifier, which comprises a bias circuit and an amplification circuit. A resistance compensating structure is designed in the bias circuit, that is, a compensating resistance is added to the bias circuit. The added compensating resistance has two functions: (1) increasing the voltage compensation of the bias circuit and reducing the dependency of the circuit on the bias voltage; and (2) enhancing the temperature compensation of the bias circuit. The change of the bias voltage or temperature causes the electric current changes of Q4 and Q5 or Q7 and Q8 of NPN tube, the change quantity of VBE of voltage generated by the electric current changes between a base electrode and a collector electrode can be compensated efficiently by the change quantity of two ends of R*1 or R*2, thereby ensuring the circuit is not sensitive to the bias voltage and the temperature.

Description

Technical field [0001] The invention relates to an analog circuit, in particular to a radio frequency power amplifier circuit. Background technique [0002] In modern wireless communication systems, the RF power amplifier is a key component to realize the wireless transmission of RF signals. The main function of the radio frequency power amplifier is to amplify the modulated radio frequency signal to the required power value and transmit it to the antenna for transmission to ensure that the receiver in a certain area can receive the signal. As a key component of the RF power amplifier circuit, its performance has a direct impact on the communication quality. The RF power transistor is the core component of the RF power amplifier, and its working state is determined by the bias circuit, so the characteristics of the bias circuit directly affect the performance of the power amplifier. When the bias voltage is unstable or the junction voltage drop of the transistor is changed due to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/21H03F1/30H03F3/19
Inventor 陈俊谢利刚
Owner RDA TECH
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