Method of forming a semiconductor device and structure thereof

Abstract

A method for forming a semiconductor device includes providing a semiconductor substrate comprising silicon, forming a layer of dielectric on the surface of the semiconductor substrate, forming a gate electrode comprising silicon over the layer of dielectric, recessing the layer of dielectric under the gate electrode, filling the recess with a discrete charge storage material, oxidizing a portionof the gate electrode, and oxidizing a portion of the semiconductor substrate.

Description

field of invention [0001] The present invention generally relates to semiconductor devices, and more particularly, to non-volatile memory devices. Background technique [0002] Electrically Erasable Programmable Read Only Memory (EEPROM) structures are commonly used in integrated circuits for non-volatile data storage. As semiconductor devices continue to be developed, the operating voltages of such semiconductor devices are often reduced for low power applications. Such reductions in operating voltage are desirable while ensuring that device speed and functionality are maintained or increased. An EEPROM device that operates at an operating voltage lower than that of a continuous floating gate device using a silicon-oxide-nitride-oxide-silicon (SONOS) structure in which charge is stored in a nitride layer . In the SONOS structure, charges can be stored at either or both ends of the SONOS structure. This allows the SONOS structure to store 4 states (00, 01, 10 and 11). T...

AI Technical Summary

Problems solved by technology

As the channel region of the SONOS structure decreases, the two states cannot be distinguished from each other due to the Frenkel-Poll mechanism

This reduces the ability to store multiple

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