Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for cleaning abnormal residual on wafer rear surface after Cu CMP procedure

A back surface, wafer technology, applied in the field of cleaning, can solve problems such as corroded metal, wafer damage, corrosion, etc., to achieve the effect of improving yield

Inactive Publication Date: 2009-04-15
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the pH value of the cleaning solution is between 5 and 6, it has weak acidity. In this way, during the cleaning process, the metal oxide will be corroded, and then the metal will be corroded, so that the entire wafer will be damaged and cannot be reused. used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for cleaning abnormal residual on wafer rear surface after Cu CMP procedure
  • Method for cleaning abnormal residual on wafer rear surface after Cu CMP procedure
  • Method for cleaning abnormal residual on wafer rear surface after Cu CMP procedure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The present invention is a further improvement to the existing cleaning method, that is, after the Cu CMP process of the wafer, first use the CTS-100 solution to clean the wafer, and check the wafer before entering the next process, if If the wafer is not oxidized and has no impurities on the surface, it will directly enter the next process. If there are abnormal residual impurities on the surface of the wafer, the wafer needs to be further processed, that is, to be cleaned again before entering the next process. And the present invention just makes great improvement to the cleaning liquid in this process, and what this cleaning liquid uses is a kind of new alkaline cleaning liquid, and its pH value is in the scope of 7~9 about, like this again to crystal When cleaning the circle, because the cleaning solution is weakly alkaline, it is difficult for the cleaning solution to react with metal oxides, let alone corrode the metal, and it is easy to clean away other impuritie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for cleaning abnormal residue on the surface of a wafer after Cu CMP processing procedure. The method comprises the steps as follows: the wafer after the Cu CMP processing procedure is put into CTS-100 solution to be cleaned for removing impurity; the wafer is checked further before the next procedure, if the surface of the wafer has no the abnormal residue, the next procedure starts directly; if the surface of the wafer also has the abnormal residue, the wafer is put into cleaning solution with the pH value between 7 and 9 to be cleaned; and the cleaned wafer is processed for next procedure. The method can reduce the cleaning time of the wafer and improve the yield of the wafer.

Description

technical field [0001] The invention relates to a cleaning method, in particular to a method for cleaning abnormal particles on the surface of wafers in the field of photolithography after the Cu CMP process. Background technique [0002] During the Cu manufacturing process of the wafer, after the wafer undergoes CMP (Chemical Mechanical Polishing, chemical mechanical polishing), many impurities, such as abrasives, abnormally small particles, etc., remain on the surface of the wafer, which requires cleaning fluid to remove Impurities. The current general practice is to clean the wafer in CTS-100 solution after grinding. Before the wafer enters the next process, the wafer needs to be inspected. If the wafer surface is clean and free of impurities, it can be directly entered In the next process, if there are particles on the surface of the wafer due to abnormal conditions, the product will be scrapped, and the next process cannot be entered immediately. At this time, the wafe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00H01L21/66H01L21/306
Inventor 罗进文邢程马智勇孙涛
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com