Method for cleaning abnormal residual on wafer rear surface after Cu CMP procedure
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2009-04-15
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a cleaning method, in particular to a method for cleaning abnormal particles on the surface of wafers in the field of photolithography after the Cu CMP process. Background technique
[0002] During the Cu manufacturing process of the wafer, after the wafer undergoes CMP (Chemical Mechanical Polishing, chemical mechanical polishing), many impurities, such as abrasives, abnormally small particles, etc., remain on the surface of the wafer, which requires cleaning fluid to remove Impurities. The current general practice is to clean the wafer in CTS-100 solution after grinding. Before the wafer enters the next process, the wafer needs to be inspected. If the wafer surface is clean and free of impurities, it can be directly entered In the next process, if there are particles on the surface of the wafer due to abnormal conditions, the product will be scrapped, and the next process cannot be entered immediately. At this time, the wafe...