Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nd<3+> ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof

A laser crystal, radiation-resistant technology, used in chemical instruments and methods, crystal growth, optics, etc.

Inactive Publication Date: 2010-09-29
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in recent years, the research on scandium-containing garnet crystals has been revived abroad. However, according to the search, there are no reports about Nd, Er: GSGG laser crystals at home and abroad.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nd&lt;3+&gt; ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof
  • Nd&lt;3+&gt; ion sensitized anti-radiation laser crystal Nd,Er:GSGG and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Growth of high Er-doped 3+ Ion concentration of Nd,Er:GSGG crystals

[0024] Highly doped Er 3+ Ionic concentrations of Nd, Er: GSGG crystals refer to Er 3+ The doping concentration of ions is between 30-50at%, Nd 3+ The concentration is between 0.5-10at%. For example Er 3+ Concentration is 35at%, Nd 3+ The concentration is 1at%. Polycrystalline raw materials prepared by solid-phase method or liquid-phase method can grow highly Er-doped 3+ Nd,Er:GSGG single crystal.

[0025] The solid phase method is according to the following chemical reaction formula:

[0026] 3xNd 2 o 3 +3yEr 2 o 3 +3(1-x-y)Gd 2 o 3 +2Sc 2 o 3 +3Ga 2 o 3 =2Nd 3x Er 3y Gd (3-3x-3y) sc 2 Ga 3 o 12 , wherein x=0.5-10at%, y=30-50at%, the polycrystalline raw material of the crystal is obtained by a solid-state reaction method;

Embodiment 2

[0027] Example 2: An experimental device for realizing Nd, Er: GSGG crystal 2.7-2.8 μm band laser output

[0028] Using 808nm semiconductor laser to pump Nd, Er:GSGG(Nd 3+ The doping concentration is 1at%, Er 3+ Doping concentration of 35at%) crystal components. The experimental device is attached figure 1 . In the figure, 1 is the 808nm semiconductor laser; 2 is the focusing lens; 3 is the dielectric mirror with total reflection for 2.7-2.8μm band and full transmission for 808nm; 4 is Nd, Er: GSGG crystal element; 5 is for the 2.7-2.8μm band Partial transmission, dielectric mirror for total reflection of 808nm; 6 laser energy meters. Since the wavelength around 2.7-2.8 μm is in the strong absorption band of water, in this laser experimental device, it is also necessary to exclude water vapor in the resonant cavity or shorten the resonant cavity to reduce the adverse effect of water vapor on laser oscillation.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention belongs to an Nd<3+> sensitized radiation-resistant laser crystal which is characterized in that the chemical expression of the crystal is Nd<3+>,Er<3+>: Gd3Sc2Ga3O12 (abbreviated as Nd, Er:GSGG, wherein, the doping concentration of the Er<3+> is higher than 30at%), both the Nd<3+> and the Er<3+> are Gd<3+> which replaces the central position of a dodecahedron in the crystal, and the Nd<3+> is taken as sensitized ions which transfer the absorbed energy to the Er<3+> ions in the crystal to enhance the laser pumping efficiency of the Nd,Er:GSGG near 2.7-2.8mum. The laser of the wave band has important application to the fields such as biomedical treatment, optical parametric oscillation, electro-optical countermeasures and the like. As the Nd, Er:GSGG laser crystal has the capacity of resisting radiation of high-intensity gamma rays and other rays, the Nd<3+> sensitized radiation-resistant laser crystal can also meet the requirements of radiation environment and space environment application besides meeting the requirements of ground application.

Description

technical field [0001] The invention belongs to the field of functional crystal materials, specifically a kind of Nd with anti-radiation performance 3+ Sensitized Er 3+ Gadolinium scandium gallium garnet laser crystal (Nd, Er: GSGG) and its preparation method. technical background [0002] Lasers used in radiation environments and space environments will be radiated by high-energy particles such as gamma rays and cosmic rays, which requires lasers to have the ability to resist high-energy ray radiation. is of great significance. [0003] Gadolinium scandium gallium garnet crystal Gd 3 sc 2 Ga 3 o 12 (GSGG) is a laser working matrix with excellent performance. The crystal structure belongs to the cubic crystal system, and single crystals with high optical quality can be grown by the melt pulling method. Zharikov (E.V.Zharikov, et al.Effect of UV-andγ-irradiation on the lasing characteristics of neodymium lasers, Bull.Acad.Sei.USSR, Phys.Ser., 1984, 48:103) and others' ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22H01S3/16C30B1/00G02F1/355C30B5/00
Inventor 孙敦陆殷绍唐张庆礼江海河谷长江罗建乔
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com