Plasma confinement device and plasma treatment device

Abstract

The invention discloses a plasma restraint device and a plasma processing device. The plasma restraint device is of a hollow cylindrical shape; the side wall of the plasma restraint device is provided with a plurality of through holes; the depths of the through holes are larger than the average free path of the charged particles in the plasma; the through holes are round holes or elongated holes. The plasma restraint device is arranged between the upper electrode and the lower electrode of the plasma processing device and can move up and down. When sheet transmitting is carried out, the plasma restraint device is raised; when the sheet transmitting is stopped, the plasma restraint device is dropped to a proper position to prepare to start the technique. The plasma can be effectively restrained in a technical area between the upper electrode and the lower electrode to reduce the particle pollution of a reaction chamber and prolong the service life of the parts in a non-technique area.

Description

technical field [0001] The invention relates to semiconductor processing equipment, in particular to a plasma confinement device and a plasma processing device. Background technique [0002] Among semiconductor processing facilities, a plasma processing apparatus is one of main facilities. [0003] Plasma treatment devices in the prior art, such as figure 1 As shown, it includes a reaction chamber 1, an upper electrode 2, a lower electrode 3, an inner liner 4, a gas input device, a vacuum obtaining device (not shown in the figure) and the like. [0004] In the process of processing the silicon wafer 5, generally the upper electrode 2 is connected to a high-frequency RF (radio frequency) power supply, and the lower electrode 3 is connected to one or more RF power supplies. Generally, the RF frequency connected to the upper electrode is higher than that of the lower electrode. Electrode RF frequency. The process of the plasma processing device is generally: use the vacuum o...

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Problems solved by technology

[0006] In the process of processing the silicon wafer 5, although most of the plasma will reside between the upper and lower electrodes, the plasma is diffused, and some of the plasma may diffuse into the entire reaction chamber. In the area where the plasma reaches, in the electric field, Under the action of the magnetic field, the plasma may corrode or deposit the components in the area at any time, which will cause particle pollution inside the chamber and may shorten the service life of the reaction chamber components

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