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Electrical fuse self test and repair

A fuse and fuse unit technology, applied in fuse testing, static memory, read-only memory, etc., can solve problems such as lack of repairability, impact on yield, and increase in manufacturing costs of integrated circuit chips

Active Publication Date: 2010-12-15
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Lack of repairability impacts yield and increases overall IC chip manufacturing cost

Method used

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  • Electrical fuse self test and repair
  • Electrical fuse self test and repair
  • Electrical fuse self test and repair

Examples

Experimental program
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Effect test

Embodiment Construction

[0015] The following provides a detailed description of a system and method for constructing an e-fuse device capable of self-testing and repairing faulty bits.

[0016] FIG. 1 shows a block diagram of a known e-fuse macro 100 . The known e-fuse macro 100 includes a plurality of e-fuses 112[0:n], a position demodulator 120, a sense amplifier module 130, and a plurality of shift registers (shift register) 144[0:n] n], and a control unit 150. The position demodulator 120 is used to select one of the plurality of electric fuses 112 [0:n] for programming or reading. Before being programmed, e-fuse 112[0:n] is low impedance. After being programmed, the impedance of the fuse rises to be visibly detected by the sense amplifier module 130 . The sense amplifier module 130 uses a known resistor (not shown) to compare the impedance of the fuse to achieve the detection of the impedance of the fuse. When the fuse is not programmed, a logic 0 is generated, and when the fuse is programmed...

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PUM

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Abstract

A circuit for testing and repairing a fuse device having a plurality of fuse units and being able to serially input and output data is disclosed, the circuit comprises a first multiplexer configured to select either a true or an inverted data for being stored in the fuse device, a second multiplexer configured to select either a true or an inverted data being read out from the fuse device, a storage unit configured to store information of faulty fuse units, and an indication bit being programmed to reflect a comparison between the data intended to be stored in the fuse device and the stored faulty unit information, wherein when the indication bit is at a first state, the first and second multiplexers select the true data, and when the indication bit is at a second state, the first and second multiplexers select the inverted data.

Description

technical field [0001] The invention relates to a design of an electric fuse circuit, in particular to a module designed for self-testing and repairing on the electric fuse circuit. Background technique [0002] An e-fuse is known as a logical non-volatile memory for permanently retaining information such as "chip-ID" and the like. A typical example is a laser fuse, where laser energy is used to volatilize metal or polysilicon chains to program the fuse, and a latch is used to sense the resulting resistance change. However, since the pitch of the laser fuse device cannot be reduced below the wavelength of the laser beam (typically 1.06 μm), the laser fuse is not suitable for deep sub-micron technology. [0003] To overcome the pitch limitations of laser fuses, an electrical fuse, usually made of silicided polysilicon, is used for programming. When programming an e-fuse, apply a high current density to the e-fuse link for a specified period of time, typically 600mA / μm for s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/44G11C17/16G01R31/74
CPCG11C29/4401G11C29/02G11C29/027
Inventor 张晴雯
Owner TAIWAN SEMICON MFG CO LTD
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