Apparatus for producing zonal polycrystalline silicon by edge limited silicon film growth method
An edge-limited, polysilicon technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve problems such as increasing cost, increasing production difficulty, and complex annular discharge channel structure.
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[0020] see image 3 , the present invention is used in the edge defined silicon film growth method to produce strip-shaped polysilicon device, including a tapered guide 9 with a central sleeve 8 and a superstructure 11 supported on the top surface of the tapered guide 9 .
[0021] The superstructure 11 includes an inner sleeve set coaxially arranged with the central casing 8, an outer sleeve set coaxially arranged on the periphery of the inner sleeve set and a top plate 1 for sealing the tops of the inner sleeve set and the outer sleeve set.
[0022] The inner sleeve group is composed of two coaxially arranged inner sleeves 12a and 12b nested in each other. Both the inner sleeve 12a and the inner sleeve 12b are cylindrical sleeves with several feet 15 on the bottom edge. , The top surface of the tapered guide 9 is provided with a branch for accommodating the legs 15, and the cross-sectional shape of the branch matches the cross-sectional shape of the legs 15.
[0023] The out...
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