Light-emitting device, electronic apparatus, and film-forming method
A technology of light-emitting device and film-forming method, which is applied in the direction of circuits, electrical components, electric solid devices, etc., to achieve the effect of stable potential and stable current control
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Embodiment 1
[0129] Auxiliary electrode width W=30μm
[0130] The thickness of the auxiliary electrode T = 310nm
[0131] Angle θ = 45 degrees for the conical shape
[0132] Auxiliary electrode material = aluminum
[0133] Thickness T1 of the barrier layer 40 = 200 nm
[0134] Material of barrier layer 40 = SiON
Embodiment 2
[0136] Auxiliary electrode width W=30μm
[0137] The thickness of the auxiliary electrode T = 200nm
[0138] Angle θ = 30 degrees for the conical shape
[0139] Auxiliary electrode material = silver
[0140] Thickness T1 of the barrier layer 40 = 200 nm
[0141] Material of barrier layer 40 = SiON
[0142] In the above-mentioned embodiments, the reason why the thickness of the auxiliary electrode can be reduced in the second embodiment compared with the first embodiment is that the resistance value of "silver" is smaller than that of "aluminum". In addition, the reason why the second embodiment can reduce the angle θ compared with the first embodiment is also for the same reason.
[0143] In any case, according to the above-mentioned Examples 1 and 2, it was confirmed that the effect according to the above-mentioned present embodiment is effectively exhibited.
[0144] A method of manufacturing the above-mentioned organic EL device, particularly a method of forming a film...
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