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Photodetection semiconductor device, photodetector, and image display device

A photoelectric detection and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of detection value influence and achieve the effect of reducing the influence

Inactive Publication Date: 2009-07-01
SII SEMICONDUCTOR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the conventional technology, the detection value can be affected by the incident electromagnetic wave to the photodiode from the outside

Method used

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  • Photodetection semiconductor device, photodetector, and image display device
  • Photodetection semiconductor device, photodetector, and image display device
  • Photodetection semiconductor device, photodetector, and image display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] (1) Overview of the embodiment

[0033] Examples of photodetectors

[0034] Photodetector 10 ( image 3 ) detects light intensity in a desired wavelength region based on the difference in charge accumulated in photodiodes 1 and 2 having different spectral characteristics for a given period of time while making the cathode terminal in an open state.

[0035] Since charges are accumulated in the photodiodes 1 and 2, charges necessary for detection can be obtained through the accumulation of photocurrent even if the photocurrent is small. Therefore, miniaturization and high detection performance of the semiconductor device can also be realized by employing the photodiodes 1 and 2 .

[0036] In addition, it is possible to obtain a large dynamic range by changing the charge accumulation time according to the light intensity, suppress power consumption by intermittently driving elements required for difference detection at the difference detection time, or reduce flicker by...

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PUM

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Abstract

Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Description

technical field [0001] The present invention relates to a photodetection semiconductor device, a photodetector, and an image display device, and, for example, to a device for measuring external brightness by using a light receiving element. Background technique [0002] The illuminance of the outside is measured by the illuminance meter to control the object based on the measured value so that the brightness of the backlight attached to the liquid crystal display screen of the cellular phone is adjusted according to the brightness of the outside. [0003] A light receiving element composed of a semiconductor device such as a photodiode that converts the intensity of received light (light intensity) into a corresponding current is used in the illuminance meter. [0004] And since silicon (Si) as the material of the light receiving element has a sensitivity peak at the infrared light, therefore, the electric current is made to be different between the light receiving elements ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H01L23/552G01J1/42G09G5/10
CPCG01J1/02G01J1/4228G01J1/46H01L31/101G01J1/04G01J1/18H01L27/14645G01J1/0488G01J1/0214G01J1/0437G01J1/0209
Inventor 近江俊彦中田太郎
Owner SII SEMICONDUCTOR CORP