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Thermal sintering processing method for preparing nano SiC film by screen printing

A technology of screen printing and processing method, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., and can solve problems such as inability to obtain large-area uniform nano-SiC films

Inactive Publication Date: 2009-07-08
BEIFANG UNIV OF NATITIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, none of these growth methods can obtain large-area uniform nano-SiC films.

Method used

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  • Thermal sintering processing method for preparing nano SiC film by screen printing

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Experimental program
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Effect test

preparation example Construction

[0014] 2. Preparation of nano-SiC slurry:

[0015] Slurry preparation process: weigh nano-graphite, nano-SiC, ethyl cellulose according to the ratio of 3:4:4 → fully stir and evenly mix → add solvent → 5-7 hours ultrasonic dispersion → heat (370K-400K) stirring → Sieve → Cool to room temperature.

[0016] Nano-SiC is easy to agglomerate, and its dispersion is carried out in three steps: the first step is to weigh nano-graphite, nano-SiC, and ethyl cellulose according to the ratio of 3:4:4 → fully stir and mix evenly; the second step is to add solvent ultrasonic dispersion 5 -7 hours, so that the agglomerated nano-SiC is separated. The third step is to filter with a high-mesh sieve (over 400 mesh), and mechanically crush the paste during the filtration process. Use mechanical external force to remove the large particles, and ensure that the size of the nano-SiC aggregates that have not been well dispersed is on a suitable scale under the action of mechanical external force, s...

Embodiment 1

[0025] A thermal sintering treatment method in the preparation of nano-SiC thin films by screen printing, comprising the following steps:

[0026] a. Grinding of nano-SiC, nano-graphite and ethyl cellulose: Since the nanoparticles are easy to agglomerate into larger aggregates with several weakly connected interfaces, this will affect the uniform distribution of nano-SiC on the surface of the thin copper sheet, thereby It affects the uniformity of electron emission, so nano-SiC, nano-graphite, and ethyl cellulose are ground to a particle size of 100 nanometers before slurry preparation, so that the agglomerates disperse and the particle size becomes smaller.

[0027] b. Preparation of nano-SiC slurry: Take 15 grams of ground nano-graphite, 60 grams of nano-SiC, and 60 grams of ethyl cellulose as the solute, add the solute to the solvent at a mass ratio of 1:3, and disperse it ultrasonically for 7 hours to a nanometer SiC is fully dispersed in the solvent, then heated to a temp...

Embodiment 2

[0033] d. Thermal sintering treatment after printing:

[0034] After raising the temperature to 380K, keep it for 20 minutes, then raise the temperature to 453K, keep it for 60 minutes, then raise the temperature to 653K, keep it for 70 minutes, and cool it down to room temperature for later use.

[0035] All the other parts are identical with embodiment 1.

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Abstract

The invention relates to a thermal sintering treatment method during preparation of a SiC membrane through silk-screen printing, which is characterized by comprising the following steps: firstly, raising the temperature to be between 350 and 380 K, and maintaining at the temperature for 20 to 25 minutes; secondly, raising the temperature to be between 423 and 453 K, and maintaining at the temperature for 60 to 75 minutes; and thirdly, raising the temperature to be between 633 and 653 K, maintaining at the temperature for 70 to 80 minutes, and naturally cooling the membrane to the room temperature for standby. The thermal sintering treatment method during preparation of the SiC membrane through silk-screen printing can dry the membrane and firmly glue the membrane on a substrate of other current-conducting plate on one hand and can decompose and evaporate pulping materials in the membrane on the other hand. Moreover, nano SiC micro-tips are exposed to the surface of the membrane so as to be favorable for electronic field emission, and prepare the nano SiC field-emissive cathode membrane.

Description

technical field [0001] The invention relates to a thermal sintering treatment method in preparing nano SiC thin films by screen printing. Background technique [0002] SiC is the only stable compound of Si and C. The mechanical properties of SiC crystals are second only to diamond. Its corrosion resistance is very strong, and it is hardly affected by any experimental solvent below 1500 °C. It cannot be melted under normal pressure, sublimates when it is higher than 2100°C, and decomposes into Si and C vapors. At 35 atmospheres, the transformation point of SiC was found at 2830°C. The saturation electron drift speed of SiC is twice that of Si, and its dielectric constant is only higher than diamond, slightly higher than GaN, and lower than several commonly used semiconductor materials such as Si and GaAs. So SiC is a very good semiconductor electronic material. At 300K, the thermal conductivity of SiC is 8-10 times higher than that of GaAs, the breakdown field strength i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/565H01J9/02G01L1/00
Inventor 张秀霞
Owner BEIFANG UNIV OF NATITIES