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Polishing slurry for low dielectric material

A technology of low dielectric material and polishing liquid, applied in the field of polishing liquid, can solve the problems of difficult control of polishing selection, low removal rate of low dielectric material, etc.

Active Publication Date: 2012-09-19
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a polishing solution for low dielectric materials with good surface finish in order to solve the problems that the removal rate of low dielectric materials is low and the polishing selection is difficult to control under lower pressure.

Method used

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  • Polishing slurry for low dielectric material
  • Polishing slurry for low dielectric material
  • Polishing slurry for low dielectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] 10% of ordinary silica sol particles (70nm) and water balance compared with polishing solution 1, pH=11;

[0046] 10% of silica sol particles (100nm) and water balance used in the polishing liquid 1 patent, pH=11;

[0047] Silica sol particles (100nm) 5%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H used in the polishing liquid 2 patent 2 o 2 1.5% and water balance, pH=11;

[0048] The silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 2 1.5% and water balance, pH=11;

[0049] Silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 21.5%, polyacrylic acid or polypropylene salt (molecular weight is 5000) (PAA) 0.2% and water balance, pH=11;

[0050] Silica sol particles (100nm) 10%, BTA 0.1%, polyamino polyether group tetramethylene phosphonic acid (PAPEMP) 0.2%, H 2 o 2 1.5%, polyacrylic ...

Embodiment 2

[0067] Polishing liquid 19 Aluminum-doped silicon oxide particles (45nm) 10%, 1-phenyl-5-mercapto-tetrazolium (PMTA) 0.01%, polyaminopolyether tetramethylenephosphonic acid (PAPEMP) 0.01% , persulfuric acid 0.1%, polyacrylic acid or polypropylene salt (molecular weight is 5000) 0.5% and water balance, pH=10.5;

Embodiment 3

[0069] SiO used in the Polishing Fluid 20 patent 2 Sol particles (80nm) 10%, 1-phenyl-5-mercapto-tetrazolium (PMTA) 0.5%, polyamino polyether tetramethylene phosphonic acid (PAPEMP) 0.1%, persulfuric acid 3%, polyacrylic acid Or polypropylene salt (molecular weight is 5000) (PAA) 0.01% and water balance, pH=11.5;

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Abstract

A polishing slurry for low dielectric material is disclosed. It includes abrasive and water, and is characterized in that, it further contains one or more kinds of metal chelating agents, azole-species as film-forming agent and oxidizing agent. Under lower pressure, the present polishing slurry has higher polishing speed on low dielectric material, suitable polishing selectivity for other materials, and better surface finish after polishing.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a polishing liquid for polishing low dielectric materials. technical background [0002] In the manufacture of integrated circuits, the standard of interconnect technology is increasing, and layers are deposited on top of each other, resulting in the formation of irregular topography on the substrate surface. One planarization method used in the prior art is chemical mechanical polishing (CMP). The CMP process uses a mixture containing abrasives and a polishing pad to polish the surface of an integrated circuit. In a typical chemical mechanical polishing method, the substrate is placed in direct contact with a rotating polishing pad, and a load is used to exert pressure on the backside of the substrate. During polishing, the pad and stage are rotated while maintaining a downward force on the backside of the substrate to apply an abrasive and chemically active solution (commonly called a pol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/304
CPCC09G1/02H01L21/31053H01L21/3212C09K3/1463
Inventor 宋伟红陈国栋荆建芬姚颖宋成兵
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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