Thin-film transistor substrate and method of manufacturing the same, wiring structure and method of manufacturing the same
A technology of thin-film transistors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, nonlinear optics, electric solid-state devices, etc., can solve the problems of large area occupied by wiring structures and wide borders, and achieve reduced area and reduced width Effect
Inactive Publication Date: 2009-07-29
INNOCOM TECH (SHENZHEN) CO LTD +1
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Problems solved by technology
[0007] In order to solve the problem of the wide frame of the thin film transistor substrate in the prior art, it is necessary to provide a thin film transistor substrate with a narrow frame
[0008] In order to solve the problem of wide borders of thin-film transistor substrates in the prior art, it is necessary to provide a method for manufacturing thin-film transistor substrates with narrow borders
[0009] In order to solve the problem of large area occupied by the wiring structure in the prior art, it is necessary to provide a wiring structure of metal wires and a manufacturing method thereof
Method used
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Embodiment Construction
[0031] see Figure 4 , which is a schematic plan view of the first embodiment of the thin film transistor substrate of the present invention. The TFT substrate 20 includes a display area 21 , a frame area 22 and an integrated circuit area 23 . The display area 21 is located at the center of the TFT substrate 20 . The frame area 22 is located on the periphery of the display area 21 . The integrated circuit area 23 is located below the frame area 22 . The frame area 22 is provided with a plurality of first metal wires 221 and a plurality of second metal wires 222 , the first metal wires 221 and the second metal wires 222 are arranged at intervals and are insulated from each other. The integrated circuit area 23 is provided with at least one driver chip 231 . The first metal wire 221 and the second metal wire 222 are respectively electrically connected to pins (not marked) of the driving chip 231 .
[0032] Please also refer to Figure 5 ,actually Figure 4 An enlarged sch...
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The invention relates to a thin film transistor substrate and a manufacturing method thereof as well as a wiring structure and a manufacturing method thereof. The thin film transistor substrate comprises an insulation fundus, a plurality of first metal leads, a plurality of second metal leads and a plurality of drive wires. A display area and a frame area are defined on the insulation fundus and the frame area is located at the periphery of the display area. The drive wires are located in the display area, and the first metal leads and the second metal leads are located in the frame area and connected with the drive wires. A plurality of insulation walls are further arranged in the frame area and distributed at equal intervals. The first metal leads are located on the insulation walls, and the second metal leads are located on the insulation fundus between the insulation walls. The width of the frame area of the thin film transistor substrate is narrow, leading the area of the display area to be relatively large.
Description
technical field [0001] The invention relates to a thin film transistor substrate and a manufacturing method thereof, as well as a wiring structure and a manufacturing method thereof. Background technique [0002] At present, liquid crystal displays are gradually replacing traditional cathode ray tube (Cathode Ray Tube, CRT) displays, and because liquid crystal displays are light, thin, and small in size, they are very suitable for use in desktop computers, notebook computers, personal digital Assistant (Personal Digital Assistant, PDA), mobile phone, TV and a variety of office automation and audio-visual equipment. The liquid crystal panel is its main component, and generally includes a thin film transistor substrate, a color filter substrate and a liquid crystal layer sandwiched between the thin film transistor substrate and the color filter substrate. [0003] see figure 1 , which is a schematic plan view of a prior art thin film transistor substrate. The TFT substrate ...
Claims
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IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/1362
Inventor 陈文桦
Owner INNOCOM TECH (SHENZHEN) CO LTD