Single particle upset and single particle transient pulse resisiting D trigger

A single-event transient and anti-single-event technology, applied in pulse processing, pulse generation, pulse technology, etc., can solve problems such as multi-delay, voting circuit, and unit area increase, and achieve high radiation resistance performance

Inactive Publication Date: 2009-08-05
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 70 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that more delay and voting circ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single particle upset and single particle transient pulse resisiting D trigger
  • Single particle upset and single particle transient pulse resisiting D trigger
  • Single particle upset and single particle transient pulse resisiting D trigger

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The embodiments of the present invention are described in detail below in conjunction with the accompanying drawings: this embodiment is implemented on the premise of the technical solution of the present invention, and detailed implementation methods and specific operating procedures are provided, but the protection scope of the present invention is not limited to the following the described embodiment.

[0027] The anti-single-event flip-flop and single-event transient pulse D flip-flop proposed in this embodiment can replace the D flip-flop without radiation-resistant hardening in applications that require higher radiation resistance performance, so that the anti-single event of the D flip-flop The performance of particle flipping and single event transient pulse reaches the same level as that of time-sampling D flip-flop, while the unit area increase is less than that of time-sampling D flip-flop and the working speed is faster than that of time-sampling D flip-flop....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a D trigger used for single particle upsetting resistance and single particle transient pulse in the technical filed of an integrated circuit, comprising two multichannel switches, two delay circuits, two protecting gate circuits and three inverters; wherein, the multichannel switches are used for forming a feedback loop for latching data; the delay circuits are used for generating signals in delay modes; the protecting gate circuits are used for filtering voltage transient fluctuation of the input signals; in the feedback loop of the D trigger, data input signal D and the delayed mode thereof enter the protecting gate circuit; and the output signals of the protecting gate circuit filter the delayed voltage transient fluctuation of the data input signal D and the width of the voltage transient fluctuation is not wider than the delay of the delay circuit. The invention can be applied to application occasions needing higher radiation resistance, leads the single particle upsetting resistance and single particle transient pulse performance of D trigger to reach the same level as a time sampling D trigger; and simultaneously, the increasing of the unit area is less than that of the time sampling D trigger and the working speed is superior to that of the time sampling D trigger.

Description

technical field [0001] The invention relates to a D flip-flop used in the technical field of integrated circuits, in particular to a D flip-flop resistant to single-event reversal and single-event transient pulse. Background technique [0002] The single event effect is a major radiation effect in integrated circuits used in aviation, aerospace and other fields. The D flip-flop is one of the most common units in a sequential logic circuit, and the ratio of the D flip-flop to the total area of ​​an ASIC (Application Specific Integrated Circuit) chip can reach 20-40%. For contemporary integrated circuits, the single-event effects that affect D flip-flops are mainly single-event upsets and single-event transient pulses. Therefore, the anti-single-event flipping and single-event transient pulse hardening of the D flip-flop can effectively improve the anti-radiation performance of the entire chip and system. [0003] After searching the literature of the prior art, it was found...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K3/037H03K17/687H03K5/13H03K19/0948H03K5/134H03K5/135
Inventor 程秀兰黄晔高正鑫张衍陈凌之
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap