Thin type transistor structure and dyamic ram and manufacturing method therefor
A technology of dynamic random access and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor/solid-state device components, etc., and can solve problems such as limited space saved
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[0032] Generally speaking, a basic memory unit of a dynamic random access memory (DRAM) is composed of a metal-semiconductor field effect transistor and a capacitor. In DRAM, a memory array (Memory Array) is composed of many basic memory units, and is controlled by corresponding word lines (WordLine) and bit lines (Bit Line). Although it can be understood that various other components are also included in the DRAM, however, for the convenience of illustration and description, other components are not shown and described here.
[0033] Please refer to figure 1 , is a schematic cross-sectional view of a dynamic random access memory with a thin transistor structure according to a preferred embodiment of the present invention. In this embodiment, in order to simplify the description, only the structure of four transistors connected to each other on the bit line is taken as an example for description.
[0034] The DRAM includes a plurality of thin transistors 210 , each of which ...
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