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Spintronic transistor

A technology of spin injection and spin polarization, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of unusable devices and no semi-metallic materials at room temperature

Inactive Publication Date: 2009-08-26
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are no established room-temperature semimetallic materials
Therefore, the inventors realized that the device theorized in [7] could not be fabricated using existing materials

Method used

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Embodiment Construction

[0058] In a non-limiting embodiment of the present invention, an all-electrical three-terminal device structure fabricated using the Si process (and extensions thereof, such as strained Si on relaxed SiGe) is discussed, which can either A conventional field effect (ie, charge) transistor can also be used as a spin transistor. By simultaneously turning on charge and spin flow when the gate bias is high and the source and drain magnetizations are parallel, and turning off the charge when the gate voltage is low and / or the magnetizations are anti-parallel and spin current, the device can act as both a conventional field-effect transistor and a spin transistor.

[0059] Referring now to the drawings, wherein like numerals indicate like or corresponding parts throughout the several views.

[0060] There are three main prerequisites for the successful realization of spintronics in semiconductors. First, there must be strong spin polarization / spin injection. Second, there must be ...

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Abstract

The present invention relates to a spintronic transistor. A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a spin detector formed on the substrate at a second side of the channel region and configured to receive said spin polarized current from the channel region; and a gate formed on the substrate in an area of said channel region.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to transistors having spin-polarized current flowing through a channel region. Background technique [0002] This invention includes the use of various techniques referenced and described in the documents identified in the following reference list, which documents are cited throughout the specification by the corresponding reference numbers in parentheses: [0003] Reference list [0004] [1] A.T.Filip, et al., Toward All Electrical Spin Injection and Detection inGaAs in a Lateral Geometry, Journal of Superconductivity: Incorporating Novel Magnetism, 2005. [0005] [2] E.I.Rashba, Theory of Electrical Spin Injection: Tunnel Contacts as a Solution of the Conductivity Mismatch Problem, Physical Review A, Vol.62, No.24, 2000. [0006] [3] D.Connelly, et al., A new Route to Zero-Barrier Metal Source / DrainMOSFETs, IEEE Transactions on Nanotechnology, Vol.3, No.1, March 2004. ...

Claims

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Application Information

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IPC IPC(8): H01L31/00
CPCH01L29/1054H01L29/66984H01F10/16H01L29/1041H01L29/7786H01L21/7624
Inventor 萨恩吉夫·考沙尔杉岛贤次斯瓦鲁普·康古利
Owner TOKYO ELECTRON LTD
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