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Method for controlling substrate thickness and apparatus for processing a substrate

A substrate and monitored technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of not providing thickness uniformity control and poor wafer uniformity

Inactive Publication Date: 2009-09-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Semitools' wet batch wafer thinning controls the amount of etch through time, but does not provide thickness uniformity control, so wafer uniformity gets worse as Si removal increases

Method used

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  • Method for controlling substrate thickness and apparatus for processing a substrate
  • Method for controlling substrate thickness and apparatus for processing a substrate
  • Method for controlling substrate thickness and apparatus for processing a substrate

Examples

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Embodiment Construction

[0040] The description of this exemplary embodiment is used to directly describe its connection relationship with the accompanying drawings, and the accompanying drawings are also regarded as a part of the entire description. References to attached, coupled, and similar terms, such as "connected" and "interconnected", refer to a relationship in which structures are protected or attached to each other directly or indirectly through an intervening structure, which may also Indicates a removable or rigid attachment or structure, unless expressly written in the negative.

[0041] The method disclosed below is used to dynamically control wafer thinning in situ to provide improved uniformity. Closed-loop uniformity control is achieved by a spin wet etch process.

[0042] Figure 4 is a flowchart of an exemplary method for controlling the thickness of a substrate.

[0043] In step 400, etching is performed by dispensing at least one etchant from at least one dispenser to a plurali...

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Abstract

The present invention provides a method for controlling substrate thickness and an apparatus for processing a substrate. The method includes: dispensing at least one etchant from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching; monitoring a thickness of the spinning substrate at the plurality of locations, so that the thickness of the substrate is monitored at each individual location while dispensing the etchant at that location; and controlling a respective amount of etching performed at each individual location, based on the respective monitored thickness at that location.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method and device, in particular to a method for controlling the thickness of a substrate and a device for processing the substrate. Background technique [0002] The semiconductor industry has evolved over the years towards reducing the size of integrated circuits (ICs). Three-dimensional integrated circuits (3D-ICs) with ultra-thin wafer stacks have been extensively and intensively studied. In order to support 3D-IC packaging, it is aimed not only to reduce the size of the IC, but also to reduce the thickness of the chip. Thinner chips may allow the use of products using 3D-ICs that contain desired thin packages, such as mobile handheld communication devices (ie, mobile phones and PDAs). A common method to achieve thin chips is to remove material from the backside of the semiconductor wafer by chemical and / or mechanical means prior to singulation. [0003] In a conventional wafer thinning proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L21/67H01L21/306
CPCH01L22/26H01L21/67253H01L21/30604H01L22/12H01L21/6708H01L2924/0002H01L2924/00
Inventor 杨固峰邱文智吴文进左克伟
Owner TAIWAN SEMICON MFG CO LTD
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