Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming photoresist layer

A photoresist layer and photoresist technology, applied in the direction of photo-engraving process coating equipment, etc., can solve problems such as defects of photoresist layer 102, and achieve the effect of reducing consumption

Inactive Publication Date: 2009-09-23
UNITED MICROELECTRONICS CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, due to the time difference between the step of supplying the pre-wetting solvent and the step of rotating the wafer, two different wet-ability of the pre-wetting solvent on the wafer surface can occur.
Therefore, please refer to figure 1 , when the photoresist layer 102 is subsequently formed on the wafer 100, since the pre-wetting solvent has two different wetting capabilities, it will cause two different junction characteristics between the photoresist and the pre-wetting solvent, so that the light The photoresist layer 102 generates ring-shaped bubbles 104 at the junction of two pre-wetting solvents with different wetting capabilities, so that the photoresist layer 102 produces defects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming photoresist layer
  • Method for forming photoresist layer
  • Method for forming photoresist layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] figure 2 What is shown is a flow chart of the method for forming a photoresist layer according to the first embodiment of the present invention.

[0043] Please refer to figure 2 , first, proceed to step S200, providing wafers to the semiconductor equipment. The semiconductor tool is, for example, a photoresist coating tool.

[0044] Next, step S202 is performed to rotate the wafer at a set rotation speed. The range of the set rotational speed is, for example, between 20 rpm and 1000 rpm.

[0045] Then, step S204 is performed, using the nozzle to supply the pre-wetting solvent onto the rotating wafer at a fixed position. The pre-wetting solvent wets the wafer surface to reduce the surface tension between the photoresist and the wafer surface, thereby reducing the consumption of photoresist material. Pre-wetting solvents are, for example, photoresist consumption reducing solvents. The fixed position is, for example, above the center of the wafer.

[0046]In the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for forming a photoresist layer, which comprises the following steps: firstly, providing a wafer into a semiconductor machine; secondly, rotating the wafer at a first rotating speed; thirdly, supplying a pre-wetting solvent onto the rotating wafer on a fixed position by a nozzle; fourthly, stopping supplying the pre-wetting solvent; fifthly, adjusting the rotating speed of the wafer from the first rotating speed to a second rotating speed which is higher than the first rotating speed; and finally, coating the photoresist layer on the wafer.

Description

technical field [0001] The invention relates to a method for forming a photoresist layer, and in particular to a method for forming a photoresist layer that pre-wets the surface of a wafer. Background technique [0002] The general manufacturing process of semiconductor devices is quite complicated, including thin film deposition, photolithography, etching, ion implantation and thermal process steps, etc. Among them, the photolithography process can be said to be one of the most important steps in the entire semiconductor process. The basic process of photolithography technology consists of three steps: coating photoresist, exposure and development. [0003] Among them, the photoresist used in the photolithography process is mainly composed of three different components such as a resin (resin), a sensitizer (sensitizer) and a solvent, and exists in a liquid form. The quality of photoresist has a very close relationship with the yield and precision of the process. Among th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/16
Inventor 刘宇桓陈志荣黄志忠
Owner UNITED MICROELECTRONICS CORP