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Chemical mechanical polishing solution

A chemical machinery and polishing liquid technology, applied in polishing compositions, other chemical processes, chemical instruments and methods, etc., can solve the problem of uncommon surface friction coefficient, and achieve the effect of reducing surface friction coefficient and reducing defects

Inactive Publication Date: 2009-10-07
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reports on the effective control of the surface friction coefficient by chemical additives are not common at present.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～34

[0026] Table 1 shows the examples 1 to 34 of the chemical mechanical polishing liquid of the present invention. According to the formula in the table, the ingredients are mixed uniformly, deionized water is the balance, and finally a pH adjuster (20% KOH or dilute HNO 3 , Choose according to the needs of pH value) Adjust to the required pH value, continue to stir to a uniform fluid, and stand still for 30 minutes to obtain various chemical mechanical polishing liquids.

[0027] Table 1 Examples 1 to 34 of the chemical mechanical polishing liquid of the present invention

[0028] Throw

[0029]

[0030]

[0031]

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Abstract

The invention discloses a chemical mechanical polishing solution containing polishing particles, oxidizer, water and one or more components in the following surface friction conditioning agents: water soluble poly-fatty chain polymers, water soluble alcohols, water soluble ethers and water soluble fibers. The polishing solution of the invention can lower the coefficient of surface friction and reduce the defects (scratch, corrosion, superficial particles, and the like) of the surface of a polished substrate.

Description

Technical field [0001] The invention relates to a chemical mechanical polishing liquid in a semiconductor manufacturing process. Background technique [0002] With the development of microelectronics technology, the integration of VLSI chips has reached billions of components, and the feature size has entered the nanometer level. This requires hundreds of processes in the microelectronics process, especially multilayer wiring, The substrate and medium must undergo global planarization. Chemical mechanical planarization is considered to be the best global planarization method. The continuous introduction of low-dielectric materials in advanced manufacturing processes puts forward higher requirements for chemical mechanical planarization. Low-dielectric materials are more sensitive to friction due to their characteristics. Commonly used chemical mechanical planarization can easily cause various damages to low-dielectric materials under high down pressure; at the same time, the grai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18C09G1/02C09K3/14H01L21/304
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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