Chemical mechanical polishing solution
A chemical machinery and polishing liquid technology, applied in polishing compositions, other chemical processes, chemical instruments and methods, etc., can solve the problem of uncommon surface friction coefficient, and achieve the effect of reducing surface friction coefficient and reducing defects
Inactive Publication Date: 2009-10-07
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF1 Cites 23 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, reports on the effective control of the surface friction coefficient by chemical additives are not common at present.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1～34
[0026] Table 1 shows the examples 1 to 34 of the chemical mechanical polishing liquid of the present invention. According to the formula in the table, the ingredients are mixed uniformly, deionized water is the balance, and finally a pH adjuster (20% KOH or dilute HNO 3 , Choose according to the needs of pH value) Adjust to the required pH value, continue to stir to a uniform fluid, and stand still for 30 minutes to obtain various chemical mechanical polishing liquids.
[0027] Table 1 Examples 1 to 34 of the chemical mechanical polishing liquid of the present invention
[0028] Throw
[0029]
[0030]
[0031]
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
| Property | Measurement | Unit |
|---|---|---|
| viscosity | aaaaa | aaaaa |
| particle diameter | aaaaa | aaaaa |
Login to view more
Abstract
The invention discloses a chemical mechanical polishing solution containing polishing particles, oxidizer, water and one or more components in the following surface friction conditioning agents: water soluble poly-fatty chain polymers, water soluble alcohols, water soluble ethers and water soluble fibers. The polishing solution of the invention can lower the coefficient of surface friction and reduce the defects (scratch, corrosion, superficial particles, and the like) of the surface of a polished substrate.
Description
Technical field [0001] The invention relates to a chemical mechanical polishing liquid in a semiconductor manufacturing process. Background technique [0002] With the development of microelectronics technology, the integration of VLSI chips has reached billions of components, and the feature size has entered the nanometer level. This requires hundreds of processes in the microelectronics process, especially multilayer wiring, The substrate and medium must undergo global planarization. Chemical mechanical planarization is considered to be the best global planarization method. The continuous introduction of low-dielectric materials in advanced manufacturing processes puts forward higher requirements for chemical mechanical planarization. Low-dielectric materials are more sensitive to friction due to their characteristics. Commonly used chemical mechanical planarization can easily cause various damages to low-dielectric materials under high down pressure; at the same time, the grai...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18C09G1/02C09K3/14H01L21/304
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap