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Visible-range semiconductor nanowire-based photosensor and method for manufacturing the same

A light sensor and nanowire technology, applied in the field of light sensors, can solve the problems that products cannot be developed for practical use, and light sensor devices cannot be manufactured on a large scale.

Inactive Publication Date: 2009-10-21
KOREA INST OF SCI & TECH
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Problems solved by technology

Due to these difficulties in the fabrication process, many nanowire-based photosensor devices cannot be mass-fabricated in a batch-fabrication method under large-scale production conditions.
As a result, current photosensor devices and products using nanowires cannot be developed for practical use

Method used

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  • Visible-range semiconductor nanowire-based photosensor and method for manufacturing the same
  • Visible-range semiconductor nanowire-based photosensor and method for manufacturing the same
  • Visible-range semiconductor nanowire-based photosensor and method for manufacturing the same

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[0042] [Fabrication of electrodes for nanowire-based photosensors]

[0043] It is effective to use a gold catalyst layer so that semiconductor nanowires are integrally arranged between electrodes, which are periodically formed on a wafer, without performing separate photolithography on each semiconductor nanowire. In the case of CdS-CdSe solid solution nanowires, when the gold catalyst layer for semiconductor nanowire growth is formed with about to about When the thickness is , the semiconducting nanowires are only formed in the region where the gold catalyst layer is present.

[0044] First, if Figure 2A As shown, a titanium layer 20 and a platinum layer 30 about 50 nm thick are formed on a substrate 10, such as a silicon substrate, at least the top surface of which is formed of an insulator (eg, SiO 2 , AlN, Si 3 N 4 or TiO 2 ). Such as Figure 2B As shown, platinum electrodes 30 are patterned by processes such as photolithography and lift-off. The thickness of t...

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Abstract

The present invention relates to a visible-range semiconductor nanowire-based photosensor and a method for manufacturing the same. The semiconductor nanowire-based photosensor includes a substrate, at least a top surface of the substrate being formed of an insulator, two electrodes spaced at a predetermined interval apart from each other on the substrate, metal catalyst layers disposed respectively on the two electrodes, and visible-range semiconductor nanowires grown from the metal catalyst layers on the two electrodes. The semiconductor nanowires grown from one of the metal catalyst layers are in contact with the semiconductor nanowires grown from the other metal catalyst layer, while the semiconductor nanowiers grown respectively from the metal catalyst layers on the two electrodes are floated between the two electrodes over the substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2008-35505 filed in the Korean Intellectual Property Office on Apr. 17, 2008, the contents of which are incorporated herein by reference. technical field [0003] The present invention relates to photosensors based on semiconductor nanowires, and more particularly, to photosensors with high sensitivity and fast response time using semiconductor nanowires sensitive to light in the visible range as A light-sensitive material, the semiconducting nanowires float between two electrodes. Background technique [0004] Due to the new features and functions of 1D nanowires, such as the dimensions of nanounits, quantum confinement effects, high single crystallinity, self-assembly, internal stress reduction effect, and high surface area to volume ratio (in traditional bulk materials may not be discovered), one-dimensional nanowires have received extensive attent...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/0256H01L31/0296H01L31/0224H01L31/02B82B1/00H01L31/18B82B3/00G01J1/42
CPCH01L31/022408Y02E10/50H01L31/03529B82Y20/00H01L31/0296H01L27/14
Inventor 崔炅镇朴宰宽金东完崔荣进朴庆洙朴宰焕边在哲
Owner KOREA INST OF SCI & TECH
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