Patterned electroless metallization processes for large area electronics

Abstract

The present invention generally provides an apparatus and method for selectively forming a metallized feature, such as an electrical interconnect feature, on an electrically insulating surface of a substrate. The present invention also provides a method of forming a mechanically robust, adherent, oxidation resistant conductive layer selectively over either a defined pattern or as a conformal blanket film. Embodiments also generally provide a new chemistry, process, and apparatus to provide discrete or blanket electrochemically or electrolessly platable ruthenium containing adhesion and initiation layers. Aspects of the present invention may be used for flat panel display processing, semiconductor processing, or solar cell device processing. The processes described herein may be useful for the formation of electrical interconnects on substrates where the line sizes are generally larger than semiconductor devices or where the formed features are not as dense.

Description

technical field [0001] Embodiments of the invention generally relate to methods of depositing a catalytic layer prior to depositing a conductive layer on a substrate surface. Background technique [0002] Metallization of flat panel display devices, solar cells, and other electronic devices using conventional techniques, such as electroless and electrochemical plating, has certain negative characteristics, which often include poor adhesion to substrate surfaces. Thus when forming an interconnect layer, such as a copper layer deposited on a thin film by conventional techniques, internal or external stress in the deposited layer often causes the metal layer to detach from the substrate surface. [0003] Traditional deposition techniques such as physical vapor deposition (PVD) and electrochemical metallization processes cannot selectively form metallization features on the substrate surface. Forming discontinuous features using a non-selective deposition process requires photo...

AI Technical Summary

Problems solved by technology

[0002] Metallization of flat panel display devices, solar cells, and other electronic devices using conventional technologies such as electroless plating and electrochemical plating has certain negative characteristics, which often include poor adhesion to the substrate surface

Therefore, when forming an interconnection layer, such as a copper layer deposited on a thin film by conventional techniques, internal or external stress of the deposited layer often causes the metal layer to detach from the substrate surface

[0003] Traditional deposition techniques such as physical vapor deposition (PVD) and electrochemical metallization processes cannot selectively form metallized features on the substrate surface

Forming discontinuous features using a non-selective deposition process, requiring photolithographic patterning steps and metal etching steps to obtain the desired conductive pattern on the substrate surface, which is usually costly, time intensive, and / or labor intensive

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