Method and system for data updating

Abstract

The invention relates to a method and a system for data updating, which are applied to a nonvolatile storage. The nonvolatile storage is provided with a plurality of pages which can simultaneously erase data. The method comprises the following steps: acquiring storage pages and storage positions corresponding to first data; deciding an operation mode of the pages according to a default pattern value; programming the pages to generate a particular set according with the operation mode in each page, wherein the storage positions are in the particular set of the storage pages; and carrying out update operation on data of the particular set. The method and the system are used for improving the data updating efficiency of a flash memory, and dynamically adjusting the page size of the flash memory under the conditions of not increasing the system cost and not influencing a system framework so as to improve the utilization rate of the flash memory, and effectively improve the data updating efficiency at the same time.

Description

technical field [0001] The present invention relates to data update, especially to a flash memory with programmable pages, which can effectively increase the system flexibility and improve the efficiency of data update. Background technique [0002] According to the type of data storage and the type of data access mechanism, memory can be divided into two categories: volatile memory and non-volatile memory. Generally speaking, non-volatile memory includes: read only memory (read only memory; ROM), programmable read only memory (programmable read only memory; PROM), erasable programmable read only memory (erasable programmable read only memory) EPROM), electrically erasable programmable read only memory (electrically erasable programmable read only memory; EEPROM), and flash memory. [0003] Among them, the electrically erasable programmable read-only memory and flash memory can be repeatedly read and written electrically, and have the function of erasing, so they are widely...

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Problems solved by technology

[0004] As far as electrically erasable programmable read-only memory is concerned, it is not suitable for high-capacity products due to the large chip area required and the high price

Compared with EEPROM, although flash memory has the advantages of fast reading speed, small chip area and low power consumption, it sacrifices the flexibility of erasing at the same time. When there is less data to be updated, And it is much smaller than the update unit of flash memory, for example: when a page is used, the area that does not need to be updated originally also performs unnecessary read, erase, and write cycle operations, thereby reducing the read and write of flash memory Tolerance

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