Method and device for measuring damaged layer thickness and minority carrier lifetime of solar cell silicon chip

Abstract

The invention discloses a method for measuring damaged layer thickness and minority carrier lifetime of a solar cell silicon chip, which comprises the following measuring steps: measuring the primary thickness of the solar cell silicon chip to be measured; corroding and thinning the front and back of the solar cell silicon chip; measuring the thickness of the corroded and thinned solar cell silicon chip; passivating the surface of the solar cell silicon chip, and measuring the effective minority carry lifetime; repeating steps 2 to 4 till the measured effective minority carry lifetime is not increased any more; and subtracting the last measured thickness from the primary thickness of the solar cell silicon chip to acquire the damaged layer thickness of the solar cell silicon chip, whereinthe last measured effective minority carry lifetime is the minority carrier lifetime of the solar cell silicon chip for reflecting the quality of a silicon chip material. Simultaneously, the invention discloses a device for implementing the method. The method is simple and practical, and can measure the damaged layer thickness and the minority carrier lifetime at the same time.

Description

Method and device for measuring thickness of damaged layer of solar cell silicon wafer and minority carrier lifetime technical field The invention relates to a method and a special device for measuring the thickness of a damaged layer of a silicon wafer of a solar cell and the lifetime of a minority carrier, and belongs to the measurement technology for the thickness of a damaged layer of a silicon wafer of a solar cell and the lifetime of a minority carrier (hereinafter referred to as the lifetime of a minority carrier). technical background The damage layer of solar cell silicon wafer includes mechanical damage layer and process damage layer. The mechanical damage layer is the surface lattice damage caused by the mechanical force of the wire saw when the silicon wafer is cut from the silicon rod. The thickness of the general mechanical damage layer is about 20 microns The process damage layer is surface lattice damage caused by boron diffusion, oxidation and PECVD, and th...

AI Technical Summary

Problems solved by technology

At present, there is no method and instrument capable of simultaneously measuring the thickness of the damaged layer of silicon wafers and the lifetime of minority carriers in solar cells.

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