Photoetching method for reducing antenna effect
A technology of antenna effect and lithography, which is applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as low wafer yield, inability to effectively release charges, increase friction, etc., to achieve Effects of improving yield, eliminating antenna effect, and reducing damage
Active Publication Date: 2009-12-02
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0003] In the cleaning sub-step, the wafer is rotated at a high speed, which increases the friction, making it easier to accumulate charges between the deionized water and the IMD film, and these charges cannot be effectively released
The edge of the design window of the wafer circuit pattern is the weak part of the design. When the generated charge reaches a certain amount, it will be strung along these places to the gate of the wafer (antenna effect). In severe cases, it can even damage the gate oxide. layer, destroying the electrical properties of the wafer
Moreover, the damage caused by this antenna effect is generally not detectable in the wafer acceptance test (WAT), and can only be detected in the wafer probing (CP) stage, resulting in a very low yield rate of the wafer.
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[0012] One embodiment of the photolithography method provided by the present invention will be described in detail below in conjunction with the accompanying drawings, in order to further understand the technical solution, purpose and beneficial effects of the invention.
[0013] see figure 1 and combine figure 2 , the photolithography method of this embodiment is applied to the process of forming via holes (Via) on the metal interconnection interlayer dielectric (IMD) film of the wafer. The IMD film can be SiO 2 , SiN, SiC, SiON dielectric films, or the above-mentioned dielectric films doped with B, P, C, and F impurities. see figure 1 , the photolithography method includes coating photoresist step 1 on the IMD film, exposing step 2, developing step 3 and drying step 4. In the photoresist coating step 1, positive photoresist or negative photoresist can be coated as required, and the coated photoresist should be evenly distributed. With a positive photoresist, the expose...
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The invention discloses a photoetching method for reducing an antenna effect, which is used for photoetching an insulating medium layer of a wafer. The photoetching method comprises a photoresist coating step on the insulating medium layer, an exposure step and a developing step, wherein the developing step comprises a cleaning substep of cleaning the surface of the insulating medium layer; and in the cleaning substep, the rotating speed of the wafer is smaller than or equal to 2,000 rpm. Compared with the prior art, the photoetching method of the wafer reduces the damage on the wafer by the antenna effect and effectively improves the yield of the wafer by reducing the rotating speed of the wafer in the cleaning substep of the developing step.
Description
technical field [0001] The invention relates to a photolithography process in the field of semiconductors, in particular to a photolithography method capable of reducing antenna effects. Background technique [0002] Antenna Effect (Antenna Effect) is due to design reasons. In the back-end process of the wafer, the metal is easy to accumulate charges and affects the antenna-like effect of the front-end process along the weak part of the design. In the process of forming via holes (Via) on the interlayer dielectric (IMD) film on the surface of the wafer, in order to completely remove the residual developer and some reactants, the developing step includes a rinse sub-step (rinse). The cleaning sub-step uses deionized water (DIW) to rinse the IMD film. Since both the deionized water and the IMD film are non-conductive, two non-conductive substances will rub against each other to generate electrostatic charges. [0003] In the cleaning sub-step, the wafer is rotated at a high s...
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Login to View More IPC IPC(8): G03F7/36G03F7/40G03F7/26
Inventor 靳颖张凯元
Owner SEMICON MFG INT (SHANGHAI) CORP