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Method for forming via

A contact hole and patterning technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the contact resistance value cannot meet the needs of technological development, so as to increase the temperature, reduce the contact resistance, reduce the damage effect

Active Publication Date: 2009-12-02
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

However, after applying the above method to form through holes to form metal wiring, the resistance value of the contact resistance obviously cannot meet the needs of technological development.

Method used

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  • Method for forming via
  • Method for forming via
  • Method for forming via

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Embodiment Construction

[0041] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0042] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

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Abstract

A method for forming via comprises the following steps: forming a medium layer on a substrate; imaging the medium layer and forming a contact hole; forming an adhesive substratum covering the side wall and bottom wall of the contact hole; forming a first adhesive layer undergoing inorganic operation on the adhesive substratum; forming a second adhesive layer undergoing inorganic operation on the first adhesive layer; forming a metal layer covering the second adhesive layer and filling the contact hole. The method can reduce the contact resistance of the devices containing the via.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a through hole. Background technique [0002] In semiconductor manufacturing, there is usually an ohmic contact between the device and the external circuit. In an ideal ohmic contact, the contact resistance (Rc) should be as low as possible. [0003] In the traditional technology, in order to reduce the contact resistance of device, usually between the metal that fills through-hole and substrate, form the adhesive base layer that has definite thickness and cover described base and the bonding layer that covers described adhesive base layer (as for 90nm In terms of technology, when the metal filling the via hole is tungsten, the bonding base layer is a titanium layer and the bonding layer is a titanium nitride layer); that is, usually, as figure 1 As shown, the step of forming the through hole includes, step 21: as Figure 2a As shown, a...

Claims

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Application Information

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IPC IPC(8): H01L21/768H01L21/60H01L21/28
Inventor 陈国海苏娜胡宇慧杨瑞鹏
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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