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Read only memory (ROM) cell array and manufacturing method thereof

A read-only memory, cell array technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., to achieve low power consumption, high reliability, and ensure stability and reliability.

Active Publication Date: 2009-12-02
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the manufacturing process, technicians have to choose different masks to make memory and logic devices, or use the same mask, but sacrifice the performance of logic devices to meet the performance of memory devices

Method used

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  • Read only memory (ROM) cell array and manufacturing method thereof
  • Read only memory (ROM) cell array and manufacturing method thereof
  • Read only memory (ROM) cell array and manufacturing method thereof

Examples

Experimental program
Comparison scheme
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Embodiment

[0025] This embodiment provides a method for fabricating a read-only memory cell array, refer to the attached Figure 10 As shown, the following steps are included: Step S10, providing several read-only memory units, said several read-only memory units comprising a first type of read-only memory unit and a second type of read-only memory unit, said first type of read-only memory unit Both the unit and the second type of read-only memory unit include a semiconductor substrate and a gate dielectric layer and a gate located on the semiconductor substrate; step S11, forming a gate covering gate on the gate of the first type of read-only memory unit Low resistance state material layer. Optionally, the method further includes the following step: forming a low-resistance material layer on both sides of the gate of the second type of read-only memory unit.

[0026] Refer to attached image 3 As shown, it is a top view of the read-only memory cell array. In order to facilitate the ob...

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PUM

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Abstract

A ROM cell array comprises a plurality of ROM cells; wherein, the ROM cell comprises a semiconductor substrate and a gate dielectric layer and a grid electrode which are arranged on the semiconductor substrate, the plurality of ROM cells comprise a first ROM cell and a second ROM cell; wherein, the grid electrode of the first ROM cell is fully covered a low resistance material layer. The invention also provides a manufacturing method of the ROM cell array, which is fully compatible with that of logic devices, and a separate mask plate is not required while the performance requirements of the memory devices and the logic devices can be met.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a read-only memory cell array and a manufacturing method thereof. Background technique [0002] Read-only memory (ROM) is a solid-state semiconductor memory that can only read data stored in advance. The data stored in ROM is generally written in advance before loading into the whole machine, and can only be read out during the working process of the whole machine, but cannot be rewritten. The data stored in ROM is stable, and the stored data will not change after power failure; its structure is relatively simple, and it is more convenient to read, so it is often used to store various fixed programs and data. Read-only memory includes programmable read-only memory (PROM), erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM). Most read-only memories use metal-oxide-semiconductor ( MOS) made of field e...

Claims

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Application Information

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IPC IPC(8): H01L27/112H01L21/8246
Inventor 蔡建祥陈清
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP