Method for manufacturing CMOS embedded Schottky diode
A technology of Schottky diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that P-type Schottky diode has no practical use value and the like
Active Publication Date: 2009-12-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, P-type Schottky diodes are not practical without isolation from the P-type Schottky diode implanted in the deep N-well layer (DNW)
[0005] N-type Schottky diode is the most useful passive device, because the formation of Schottky diode requires a light N-type substrate, but all N-type substrates in the CMOS process are relatively thick and do not meet the requirements for manufacturing N-type Schottky diodes. Tertky diode requirements, so it is difficult to make an ideal N-type Schottky diode without adding a photomask
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[0015] Embodiments according to the present invention are described below with reference to the drawings.
[0016] A Schottky diode according to the present invention is formed on a P substrate. Two N+ regions are formed on the P substrate. Utilize the PESD photomask in the CMOS manufacturing process that described Schottky diode will be embedded, will open in the area that needs to manufacture described Schottky diode, with described two N+ regions in the described Schottky diode area A thin N-well is formed between them. Thus, the thin N-well is formed as a cathode of a Schottky diode. Thereafter, a metal layer is deposited on the light N well as an anode. In this embodiment, tungsten is used to form an anode contact portion on the light N well as the anode of the Schottky diode. Furthermore, the layer may also be titanium or titanium nitride.
[0017] now refer to figure 1 A Schottky diode embedded in CMOS with NFET regions of the present invention is described. Such...
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The invention discloses a method for manufacturing a CMOS embedded Schottky diode. A manufacturing process of the CMOS comprises using a PESD light mask to form a PESD area; and the method comprises the following steps: firstly forming a thin N well above the PESD area which is formed by using the PESD light mask as a cathode area of the Schottky diode, and then depositing a metal layer on the thin N well as an anode area of the Schottky diode. The Schottky diode of the invention uses the prior PESD light mask, does not need an additional light mask, and only increases a step of ion implantation process; and simultaneously, the ion implantation process can be freely designed to obtain ideal doping concentration and distribution of a diode substrate; therefore, by using the method, only little cost is increased, the Schottky diode approximate to the ideal condition can be manufactured, and negative effect on the PESD area cannot be caused at the same time.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for manufacturing Schottky diodes. Background technique [0002] Schottky diodes are low-power, high-current, and ultra-high-speed semiconductor devices that have come out in recent years. Very big. These excellent characteristics are unmatched by diodes, so they are widely used. Especially in RFID applications, Schottky diodes are one of the key passive components. [0003] In CMOS processes, Schottky diodes are formed on the surface of the active region of a semiconductor wafer by depositing a metal such as titanium or platinum on regions doped with dopants at selected concentrations. Depending on the type of dopant, a P-type Schottky diode and an N-type Schottky diode can be formed, respectively. [0004] P-type Schottky diodes are easier to manufacture. However, P-type Schottky diodes are not practical without isolation from the P-type Schottky diode implant...
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IPC IPC(8): H01L21/8249H01L21/266
Inventor 黎坡张拥华周建华彭树根
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP