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Processing device

A technology for processing devices and objects to be processed, applied to electrical components, plasma, discharge tubes, etc., to achieve the effects of reducing bending, avoiding wear, and good in-plane uniformity

Inactive Publication Date: 2009-12-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, any of these technologies is only for the purpose of improving the in-plane uniformity of etching, and there is no description of a solution to the bending that occurs with the increase in the size of the rectifying wall.

Method used

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Embodiment Construction

[0072] Below, refer to Figure 1 ~ Figure 3 The structure of the etching processing apparatus 2 of this embodiment is demonstrated. figure 1 The etching processing apparatus 2 shown in the vertical cross-sectional view of , is an apparatus for performing etching processing on an aluminum (Al) film formed on the surface of a substrate S which is a quadrangular FPD substrate, for example.

[0073] The etching processing apparatus 2 has a processing container 20 as a vacuum chamber for etching the substrate S therein. The etching processing apparatus 2 of the present embodiment, for example, can process at least a large quadrangular substrate whose long side is more than 2 m. The planar shape of the processing container 20 is, for example, a quadrangle. It is formed in a size of about 3.0m. The processing container 20 is made of a material having good thermal conductivity and electrical conductivity, such as aluminum, and the processing container 20 is grounded. Furthermore, ...

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Abstract

The present invention provides a processing device, capable of reducing the bend of a commutation wall locating around an object to be processed. Processing gas is supplied to the inner of a processing container (20) to process the object (S) to be processed carried on a carrying table (3). In a processing device (2) for etching and the like, a commutation member (5) is connected with a plurality of commutation walls (51) extending along each side of the object (S) and encloses the object (S), two ends of each commutation wall (51) are supported by a support member (52), furthermore, the upper edge of support member (52) is formed with a gradually elevated shape towards the central part of the commutation wall (51), on the other hand, the lower edge is parallel to the top face of the carrying table.

Description

[0001] technology area [0002] The present invention relates to a technique of supplying a processing gas to an object to be processed, such as a glass substrate for an FPD (Flat Panel Display), in a processing container, and performing a predetermined process on the object to be processed by the processing gas. Background technique [0003] In the manufacturing process of LCD (Liquid Crystal Display: liquid crystal display device), there is a process of etching an aluminum (Al) film formed on a glass substrate. An example of an etching processing device for performing this process is based on Figure 12 For brief description, 1 in the figure is a vacuum chamber, and in the inside of this vacuum chamber 1, a mounting table 11 for mounting, for example, an FPD substrate S (hereinafter referred to simply as a substrate S) as an object to be processed is provided, and A processing gas supply unit 12 serving as an upper electrode is provided to face the mounting table 11 . Furth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00C23F4/00H05H1/24H01J37/32
CPCH01J37/3244H01L21/3065H01L21/67069H01L21/683
Inventor 南雅人佐佐木芳彦
Owner TOKYO ELECTRON LTD
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