Semiconductor structure with sensitization diode layer

Abstract

The present invention discloses a semiconductor structure having a substrate, a silicon layer, a sensitization diode layer and a metallic layer. The substrate is made of transparent material, the silicon layer is prepared on a first surface of the substrate, the sensitization diode layer is prepared on the silicon layer and the metallic layer is prepared on the sensitization diode layer. The sensitization diode layer is used to sense incidence lights to a second surface of the substrate to penetrate the substrate, and the second surface and the first surface are arranged on two sides of the substrate. In the invention, the sensitization diode layer is prepared on a surface of the substrate and senses incidence lights to the other surface of the substrate to penetrate the substrate, thus, the design of the metallic layer is more simple and the sensitization diode layer also has an optional sensitization efficiency.

Description

technical field [0001] The invention relates to a semiconductor structure, especially a semiconductor structure with a photodiode layer and a substrate made of a light-transmitting material. Background technique [0002] see figure 1 , figure 1 is a schematic diagram of a known semiconductor structure 100 . Such as figure 1 As shown, the semiconductor structure 100 includes a substrate 110 , a photodiode layer 120 and a metal layer 130 , wherein the metal layer 130 includes an opening 131 to allow the photodiode layer 120 to detect light. In the semiconductor structure 100, the material of the substrate 110 is silicon, the photodiode layer 120 is fabricated on one surface of the substrate 110, and the metal layer 130 is fabricated on the photodiode layer 120, because the substrate 110 itself is opaque, so The photodiode layer 120 detects the incident light through the opening 131 of the metal layer 130, however, because part of the light is blocked by the metal lines in ...

AI Technical Summary

Problems solved by technology

In the semiconductor structure 100, the material of the substrate 110 is silicon, the photodiode layer 120 is fabricated on one surface of the substrate 110, and the metal layer 130 is fabricated on the photodiode layer 120, because the substrate 110 itself is opaque, so The photodiode layer 120 detects the incident light through the opening 131 of the metal layer 130, however, because part of the light is blocked by the metal lines in the metal layer 130, the photodiode layer 120 cannot effectively detect the incident light. , in addition, the design of the metal layer 130 will also become more complicated due to the need for a large light-transmitting area

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