Mask and production method thereof

Abstract

The invention discloses a mask and a production method thereof. The mask comprises a substrate, wherein a completely permeable region, a non-permeable region and a semipermeable region are formed on the substrate; and the inside of the semipermeable region is provided with a semipermeable membrane capable of ensuring even light permeation of the semipermeable region. According to the technical scheme, the semipermeable region of the mask adopts the semipermeable membrane of uneven thickness; therefore, when adopted to carry out channel region mask exposure, the mask can ensure even exposure ofphotoresist at a channel region; thus, the method solves the problem of uneven photoresist exposed by the prior gray tone mask technology and ensures relative evenness of photoresist exposed at the channel region, thereby increasing the planeness of exposed photoresist to reduce the occurrence rate of channel bridge or channel open circuit; moreover, the mask and the method also solve the problemin the prior intermediate-tone mask technology that inclination angle of photoresist exposed at a channel is too small by increasing the inclination angle of exposed photoresist, thereby improving the charge characteristic of a TFT channel.

Description

technical field

[0001] The invention relates to the field of TFT LCD manufacturing, in particular to a mask plate and a manufacturing method thereof. Background technique

[0002] Among flat panel display technologies, TFT LCD has dominated the flat panel display market due to its low power consumption, relatively low manufacturing cost, and no radiation. As an important device of TFT LCD, TFT is composed of gate electrode, gate electrode insulating layer and semiconductor layer, doped semiconductor layer, source electrode, drain electrode, passivation layer and pixel electrode. Its early manufacturing process is 5Mask process technology. In recent years, with the development of TFT manufacturing technology, the 4Mask process, which is formed by exposing the gate electrode insulating layer, semiconductor layer, doped semiconductor layer, source electrode, and drain electrode at one time, has become more and more widely used. Generally, the 4Mask process is divided into gray...

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