Mask and production method thereof

一种制造方法、掩模板的技术，应用在半导体/固态器件制造、图纹面的照相制版工艺、仪器等方向，能够解决光刻胶曝光不均匀等问题，达到提高充电特性、减小长度、提高平整度的效果

Active Publication Date: 2010-02-17
K TRONICS (SUZHOU) TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to address the defects of the prior art, propose a mask and its manufacturing method, effectively solve the technical defects caused by the uneven exposure of the photoresist at the channel region in the gray tone or half tone mask technology

Method used

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  • Mask and production method thereof
  • Mask and production method thereof

Examples

Experimental program
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Effect test

Embodiment Construction

[0074] figure 1 It is a schematic plan view of Embodiment 1 of the mask plate of the present invention, figure 2 for figure 1 Middle A-A sectional view, such as figure 1 , 2 As shown, the mask plate includes a substrate 1. A non-transparent region 2 and a semi-transparent region 3 are formed on the substrate 1. The other regions are completely transparent regions, and a semi-transparent film is arranged in the semi-transparent region 3. The semi-transparent area 3 can be uniformly transparent, and the thickness of the semi-transparent film located in the middle area in the semi-transparent area 3 is greater than the thickness of the semi-transparent film located in the area outside the intermediate area. A metal layer 5 and a semi-permeable film are formed in the non-transparent region 2 . Wherein, the semipermeable membrane includes a first semipermeable membrane 4a and a second semipermeable membrane 4b located on the first semipermeable membrane 4a, and the first se...

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Abstract

The invention discloses a mask and a production method thereof. The mask comprises a substrate, wherein a completely permeable region, a non-permeable region and a semipermeable region are formed on the substrate; and the inside of the semipermeable region is provided with a semipermeable membrane capable of ensuring even light permeation of the semipermeable region. According to the technical scheme, the semipermeable region of the mask adopts the semipermeable membrane of uneven thickness; therefore, when adopted to carry out channel region mask exposure, the mask can ensure even exposure ofphotoresist at a channel region; thus, the method solves the problem of uneven photoresist exposed by the prior gray tone mask technology and ensures relative evenness of photoresist exposed at the channel region, thereby increasing the planeness of exposed photoresist to reduce the occurrence rate of channel bridge or channel open circuit; moreover, the mask and the method also solve the problemin the prior intermediate-tone mask technology that inclination angle of photoresist exposed at a channel is too small by increasing the inclination angle of exposed photoresist, thereby improving the charge characteristic of a TFT channel.

Description

technical field [0001] The invention relates to the field of TFT LCD manufacturing, in particular to a mask plate and a manufacturing method thereof. Background technique [0002] Among flat panel display technologies, TFT LCD has dominated the flat panel display market due to its low power consumption, relatively low manufacturing cost, and no radiation. As an important device of TFT LCD, TFT is composed of gate electrode, gate electrode insulating layer and semiconductor layer, doped semiconductor layer, source electrode, drain electrode, passivation layer and pixel electrode. Its early manufacturing process is 5Mask process technology. In recent years, with the development of TFT manufacturing technology, the 4Mask process, which is formed by exposing the gate electrode insulating layer, semiconductor layer, doped semiconductor layer, source electrode, and drain electrode at one time, has become more and more widely used. Generally, the 4Mask process is divided into gray...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/08G03F1/00H01L21/00
CPCG03F7/0007G03F1/144G03F1/50
Inventor 朴云峰朴春培秦纬王威
Owner K TRONICS (SUZHOU) TECH CO LTD
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