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87results about How to "Improve charging characteristics" patented technology

Synergistic spray charging and electrostatic dust collecting method and device

InactiveCN102145316AIncreased viscosityPromote reunionElectrostatic separationElectrostatic precipitatorDust particles
The invention relates to a synergistic spray charging and electrostatic dust collecting method by which a water spray charging device is combined with an electrostatic dust collector, flue gas is conditioned by using water spray, agglomeration of dust particles is promoted and the charging characteristic of the dust particles is improved through charging drops containing an agglomerating agent, thus the dust collection efficiency of the electrostatic dust collector is increased, the fine dust collecting efficiency is higher than 90 percent, and the concentration of smoke dust at an outlet is lower than 50 milligrams per cubic meter. The invention also discloses a synergistic spray charging and electrostatic dust collecting device which comprises the electrostatic dust collector and the water spray charging device, wherein the electrostatic dust collector is arranged on a flue; and the water spray charging device is arranged on a flue in front of an inlet of the electrostatic dust collector, or on a gradually expanded section of the inlet or on a position of a bottom second-stage or third-stage electric field in the electrostatic dust collector. The water spray charging device comprises a dual-fluid atomizing nozzle and a corona ring, wherein the dual-fluid atomizing nozzle is arranged at the front part of the corona ring, an insulator is arranged outside the upper end of the corona ring, and the corona ring is connected with a high-voltage power supply through a wire. The synergistic spray charging and electrostatic dust collecting device has a simple structure, low cost and high dust collecting efficiency.
Owner:SHANDONG UNIV

Heat pipe and spray charging and particle modifying coupled synergistic electrostatic dust removing system assisting in desulfurization waste water treatment

The invention provides a heat pipe and a spray charging and particle modifying coupled synergistic electrostatic dust removing system assisting in desulfurization waste water treatment. The system comprises a water charging device and an electrostatic dust remover. The water charging device is installed on a flue on the front portion of an inlet of the electrostatic dust remover. The spray charging device is connected with a desulfurization waste water temporary storage pool and provided with an atomizing nozzle. A corona ring is installed at the downstream of the atomizing nozzle and connected with a high-voltage power supply. The novel heat pipe structure is provided, meanwhile, mixed spray of the desulfurization waste water and a particle modifier is obtained through the dual-fluid atomizing nozzle, quick charging is achieved through a charging ring, the desulfurization waste water can be effectively treated, fine particles can be fully agglomerated, and the particle removal efficiency is improved; and meanwhile, the spray charging device can be installed on the flue on the front portion of the inlet of the electrostatic dust remover, so that flexibility and convenience are achieved.
Owner:SHANDONG UNIV

TFT (thin film transistor) array substrate as well as production method and manufacturing equipment for same

The embodiment of the invention provides a TFT (thin film transistor) array substrate as well as a production method and manufacturing equipment for the same, relating to the field of manufacturing for thin-film-transistor liquid crystal displayer, being capable of improving the charge characteristic of TFT and increasing the carrier mobility of TFT, as well as being simple and convenient in realization, and low in cost. The method comprises the following steps of: forming a gate insulating layer on a substrate; charging H2 to perform surface treatment on the gate insulating layer in a first CVD (chemical vapour deposition) cavity, and then depositing a first a-Si active layer on the gate insulating layer; performing annealing treatment on the first a-Si active layer in a second CVD cavity internally charged with high-pressure N2 and H2; and after the annealing treatment, depositing a second a-Si active layer and a third a-Si active layer on the first a-Si active layer respectively, and depositing a P-doped n<+> amorphous silicon layer on the third a-Si active layer in the first CVD cavity. The method provided by the embodiment of the invention is used for manufacturing a TFT array substrate.
Owner:BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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