TFT (thin film transistor) array substrate as well as production method and manufacturing equipment for same

Abstract

The embodiment of the invention provides a TFT (thin film transistor) array substrate as well as a production method and manufacturing equipment for the same, relating to the field of manufacturing for thin-film-transistor liquid crystal displayer, being capable of improving the charge characteristic of TFT and increasing the carrier mobility of TFT, as well as being simple and convenient in realization, and low in cost. The method comprises the following steps of: forming a gate insulating layer on a substrate; charging H2 to perform surface treatment on the gate insulating layer in a first CVD (chemical vapour deposition) cavity, and then depositing a first a-Si active layer on the gate insulating layer; performing annealing treatment on the first a-Si active layer in a second CVD cavity internally charged with high-pressure N2 and H2; and after the annealing treatment, depositing a second a-Si active layer and a third a-Si active layer on the first a-Si active layer respectively, and depositing a P-doped n<+> amorphous silicon layer on the third a-Si active layer in the first CVD cavity. The method provided by the embodiment of the invention is used for manufacturing a TFT array substrate.

Description

technical field [0001] The invention relates to the field of manufacturing thin film transistor liquid crystal displays, in particular to a TFT-LCD array substrate, a manufacturing method and manufacturing equipment thereof. Background technique [0002] TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) uses the change of the electric field intensity sandwiched on the liquid crystal layer to change the orientation of liquid crystal molecules, thereby controlling the intensity of light transmission to display images. Generally speaking, a complete liquid crystal display panel must have a backlight module, a polarizer, a TFT lower substrate, a CF (color filter) upper substrate, and a liquid crystal molecule layer filled in a box composed of these two substrates. There are a large number of pixel electrodes on the TFT substrate, and the on-off and magnitude of the voltage on the pixel electrodes are controlled by the gate connect...

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to use special technology to produce low-temperature polysilicon. One way is to deposit low-temperature polysilicon at a lower temperature, but this method requires expensive laser annealing equipment, and the polysilicon produced is not uniform.

Another way is to generate low-temperature polysilicon by the metal induction method, but this method requires an additional sputtering metal induction layer, and will introduce metal impurities into the polysilicon, resulting in an increase in Ioff

In addition, another disadvantage of using polysilicon is the need to increase the number of masks, increasing the cost and difficulty of the process

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