Detection method and characteristic dimension measuring instrument
A technology of characteristic dimensions and measuring instruments, which is applied in the field of detection technology and CD measuring instruments, can solve problems such as large deviation, no detection method for CD measuring instruments, and insufficient measurement values, so as to achieve simple operation, eliminate adverse effects, and facilitate implementation Effect
Inactive Publication Date: 2011-10-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
Because in the actual measurement process, the CD measuring instrument is relatively sensitive and is easily affected by the surrounding magnetic field, making the measured value not accurate enough
If the influence of the magnetic field is unstable, it will also cause a large deviation between the measured value and the true value
If this phenomenon cannot be detected in time, it will affect the process capability index of the yellow light area and the etching area
However, there is currently no effective detection method and CD measuring instrument that can detect the degree of influence of the magnetic field
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[0015] One embodiment of the detection method of the present invention and a CD measuring instrument using the detection method will be described in detail below in conjunction with the accompanying drawings, in order to further understand the efficacy, characteristics, etc. of the present invention.
[0016] This embodiment is described by taking the measurement of the characteristic dimensions of some circuit patterns on a semiconductor device as an example. Such as figure 1 As shown, the semiconductor device 1' has a circuit pattern 2', and it is necessary to use a CD measuring instrument to measure the characteristic size of the circuit pattern 2'. When measuring, first use the electron microscope (SEM) on the CD measuring instrument to enlarge the circuit pattern to a given magnification and take a picture, and then use a specific measurement method to measure on the image after taking the picture to obtain the characteristic size of the image. When measuring, if the CD ...
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The invention discloses a detection method, which is used to detect the degree of the influence of magnetic fields on CD measurement. The detection method comprises: using a single measurement method to measure the characteristic dimension of a circuit graph to obtain a measurement value W1; using a multi-point measurement method to measure the characteristic dimension of the circuit graph to obtain a measurement value W2; and obtaining a magnetic-field influence index which is the ratio of the measurement value W1 to the W2, wherein the larger magnetic-field influence index shows that a characteristic dimension measuring instrument is under more influence of the magnetic fields, and the magnetic-field influence index closer to 1 shows that the characteristic dimension measuring instrument is under less influence of the magnetic fields. The detection method has the advantages of applying the different measurement methods provided by the CD measuring instrument and using the ratio of the two measurement values to quantitatively characterize the degree of the influence of the magnetic fields on the CD measuring instrument, along with simple operation, convenient implementation and no need for additional instruments, equipment or operators. In addition, the invention also discloses the CD measuring instrument applying the detection method.
Description
technical field [0001] The invention relates to a detection process in the field of semiconductors, in particular to a detection method for detecting the degree to which a characteristic dimension (CD) measuring instrument is affected by a magnetic field and a CD measuring instrument using the detection method. Background technique [0002] With the development of miniaturization of semiconductor devices, the density of integrated circuits on semiconductor devices has greatly increased, and the characteristic size (CD) of integrated circuits has become an important parameter, and its accuracy directly affects the electrical performance of semiconductor devices. The CD of each layer of the semiconductor device needs to be measured with a CD measuring instrument and strictly controlled to ensure the smooth progress of the subsequent process. [0003] The process capability index (CPK) is commonly used in the industry to measure the quality and reliability of a process. The pro...
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IPC IPC(8): G01R31/00
Inventor 柳会雄
Owner SEMICON MFG INT (SHANGHAI) CORP