Designing method for LED wafer tri-laser-beam scribing equipment

Abstract

The invention relates to a designing method for LED wafer tri-laser-beam scribing equipment, in which the output end of a laser is provided with a light gate, the output end of the light gate is connected with a beam expander, a first total reflecting mirror is arranged at the output end of the beam expander, the output end of the first total reflecting mirror is linked with a laser beam splittingsystem used for splitting a single-beam laser source into tri-laser-beams, the output end of the laser beam splitting system is provided with a second total reflecting mirror which is linked with a focusing mirror, and the focusing mirror in right face of a processing platform; laser light coming out of the laser is emitted to the beam expander via the light gate, the laser light passing throughthe beam expander is emitted to the first total reflecting mirror, the laser light passing through the first total reflecting mirror is emitted to the laser beam splitting system, the laser beam splitting system outputs triple laser beams with equivalent dimension and energy, the triple laser beams are emitted to the second total reflecting mirror, are emitted to the focusing mirror after the angle is intersected by the second total reflecting mirror, and are parallel focused on the processing platform after permeating through the focusing mirror. The equipment realizes parallel scribing on the LED wafer tri-laser-beam and can be widely used for cutting LED wafers.

Description

technical field [0001] The invention relates to laser processing equipment, in particular to a design method of ultraviolet laser high-precision processing equipment for LED wafer scribing, and belongs to the technical field of laser precision processing equipment. Background technique [0002] As we all know, blue LED wafers are often grown on sapphire base material by vapor deposition method to grow GaN light-emitting layer. At present, the size of the common blue LED wafer is 2 inches, and several inches of wafers need to be cut before LED terminal application packaging into smaller sized grains. For sapphire-based LED wafer cutting, the previous diamond tool has been completely replaced by ultraviolet laser scribing. Through the introduction of new laser technology, the scribing time for a typical 12mil×12mil grain size is about 8 minutes. [0003] With the development of the LED industry, the reduction of LED prices and the improvement of luminous efficiency have drive...

AI Technical Summary

Problems solved by technology

Of course, the common way to improve production efficiency is to increase the scribing speed. In fact, the laser scribing machine applied to LED wafers also experienced 3 pieces / hour at the speed of 10mm / s in the early stage, and 5 pieces / hour at the speed of 20mm / s in the mid-term. Hours, now 8 pieces / hour at a speed of 70mm / s, from the upgrading process of the laser scribing machine, it can be seen that the improvement of the scribing efficiency by simply increasing the scribing speed is getting smaller and smaller.

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