Al-based alloy sputtering target and manufacturing method thereof

A manufacturing method and alloy-based technology, which is applied in the field of Al-based alloy sputtering target and its manufacturing, can solve the problems of poor sputtering, FPD yield and action performance reduction, etc., to improve action performance, reduce abnormal discharge, The effect of preventing defects

Active Publication Date: 2010-04-07
KOBELCO RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase the film formation speed, it is easiest to increase the sputtering power, but if the sputtering power is increased, sputtering defects such as splashing (fine molten particles) will occur, and defects will occur on the wiring film, etc., which will lead to FPD yields. And disadvantages such as reduced operating performance

Method used

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  • Al-based alloy sputtering target and manufacturing method thereof
  • Al-based alloy sputtering target and manufacturing method thereof
  • Al-based alloy sputtering target and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0108] Using an Al-Ni-Cu-La alloy, under various conditions shown in Table 1 and Table 2, an Al-based alloy preform (density: about 50 to 60%) was obtained by spray molding.

[0109] (Injection molding conditions)

[0110] Melting mixing degree: 800~1100℃ (see Table 1, Table 2)

[0111] Gas / metal ratio: 5~8Nm 3 / kg (see Table 1, Table 2)

[0112] Spray distance: 800 ~ 1300mm (see Table 1, Table 2)

[0113] Aerosolizer outlet angle α (see figure 2 ): 7°

[0114] Collector Angle β: 35°

[0115] The preform obtained as described above was enclosed in a container for degassing, and the entire container was subjected to hot isostatic pressing (HIP) to obtain a dense body of Al—Ni—Cu—La alloy. HIP treatment was carried out under the conditions of HIP temperature of 550° C., HIP pressure of 85 MPa, and HIP time of 2 hours.

[0116] Then, the obtained dense body is forged to form a plate-shaped metal material, and then rolled so that the thickness of the plate becomes approxim...

Embodiment 2

[0147] Next, use the Al-Co-Ge-La alloy (Table 3, Table 4), use the same method and conditions as in Example 1 (excluding the conditions shown in Table 3, Table 4) to produce Al-based alloy sputtering Target (sample) (No. 34-66). The Vickers hardness (HV) of the obtained Al-based alloy sputtering target was measured, and a sputtering test was performed, thereby evaluating the occurrence of initial spattering.

[0148]

[0149]

[0150] In table 3, table 4, Co (at %) represents the content (at %) of Co element, Ge (at %) represents the content (at %) of Ge element, La (at %) represents the content (at %) of La element ). From Table 3 and Table 4, the following contents can be known. Numbers 34~43, 45~47, 50~52, 54~56, 58~60, 63~65 are due to proper control of the Vickers hardness (HV) of the Al-Co-Ge-La alloy sputtering target, so the initial The number of splashes is less than 8 / cm 2 , which has the effect of reducing the initial splash.

[0151] On the other hand, t...

Embodiment 3

[0161] Next, using Al-Ni-Ge-Nd alloys (Table 5, Table 6), through the same method and conditions as in Example 1 (excluding the conditions shown in Table 5, Table 6), Al-based alloys were produced Sputtering target (sample) (No. 67-99). The Vickers hardness (HV) of the obtained Al-based alloy sputtering target was measured, and further a sputtering test was performed to evaluate the occurrence of initial spattering.

[0162]

[0163]

[0164] In Table 5 and Table 6, Ni (at %) represents the content (at %) of Ni element, Ge (at %) represents the content (at %) of Ge element, Nd (at %) represents the content (at %) of Nd element ). From Table 5 and Table 6, we can know the following contents. Numbers 67~76, 78~80, 83~85, 87~89, 91~93, 96~98 due to proper control of the Vickers hardness (HV) of the Al-Ni-Ge-Nd alloy sputtering target, the initial splash The occurrence number is less than 8 / cm 2 , which has the effect of reducing the initial splash.

[0165] On the othe...

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Abstract

The present invention provides an Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

Description

[0001] This application claims the priority of Japanese Patent Application No. 2008-093264 for which it applied on March 31, 2008, The whole content of this application is used here. technical field [0002] The present invention relates to a compound containing at least one selected from Group A (Ni, Co), at least one selected from Group B (Cu, Ge) and at least one selected from Group C (La, Gd, Nd). Al-based alloy (hereinafter referred to as "Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd) alloy") sputtering target and its manufacturing method, in detail, relate to An Al-based alloy sputtering target that reduces initial spatter generated at the initial stage of sputtering when forming a thin film using a sputtering target, and a method for manufacturing the same. Background technique [0003] Al-based alloys are widely used in liquid crystal displays (LCD: Liquid Crystal Display), plasma displays (PDP: Plasma Display Panels), electroluminescent displays (ELD: Electro Luminescence Displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C22C21/00C22C21/12C22C1/02C22F1/04C22F1/057
CPCC22F1/04C23C14/3414C22C21/00
Inventor 高木胜寿岩崎祐纪得平雅也后藤裕史三木绫奥野博行越智元隆岸智弥
Owner KOBELCO RES INST
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