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A kind of preparation method of indium gallium zinc oxide powder and its ceramic target material

A technology of indium gallium zinc oxide and ceramic targets, which is applied in chemical instruments and methods, gallium/indium/thallium compounds, zinc oxide/zinc hydroxide, etc., can solve the problem of reducing target service life, affecting target density, Resistivity uniformity, affecting the performance of TFT devices and other issues, to achieve the effect of reducing abnormal discharge, small grains, and low resistivity

Active Publication Date: 2015-11-04
广州市尤特新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Seriously affect the density, resistivity and uniformity of the target, causing nodule to form on the surface of the target during the sputtering process, reducing the service life of the target and affecting the performance of the TFT device

Method used

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  • A kind of preparation method of indium gallium zinc oxide powder and its ceramic target material
  • A kind of preparation method of indium gallium zinc oxide powder and its ceramic target material
  • A kind of preparation method of indium gallium zinc oxide powder and its ceramic target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Using metal indium, gallium chloride, and zinc chloride with a purity of 99.99% as raw materials, according to the ratio of In:Ga:Zn=1:1:1, weigh 36.6g of metal indium, 102.0g of gallium chloride hydrate, and Zinc 43.5g. Dissolve indium with 36% concentrated hydrochloric acid. After indium is completely dissolved, mix gallium chloride, zinc chloride and indium solution evenly. The concentration of indium ions is 1.0mol / L. Stir the solution at a speed of 200 rpm in a water bath, control the reaction temperature at 40° C., and quickly add concentrated ammonia water with a concentration of 25%. When the pH of the reaction solution is 6.5, stop adding ammonia water, continue to stir for more than 2 hours, and then age for more than 6 hours. Wash the precipitate with deionized water until the conductivity is less than 20us / cm, then wash with alcohol, and dry the precipitate to constant weight. Calcining the obtained hydroxide powder at 700°C for more than 2 hours to obtain...

Embodiment 2

[0042] Using metal indium, gallium chloride, and zinc chloride with a purity of 99.99% as raw materials, according to the ratio of In:Ga:Zn=2:2:1, weigh 22.2509g of metal indium with an electronic balance, and use 36% concentrated Hydrochloric acid dissolves indium, after the indium is completely dissolved, add 79.2010g hydrated GaCl 3 , 13.1919g ZnCl 2 , stir it evenly, and the indium ion concentration is 1.0mol / L. Stir the solution at a speed of 200 rpm in a water bath, control the reaction temperature at 10° C., and quickly add concentrated ammonia water with a concentration of 25%. When the pH of the reaction solution is 7.5, stop adding ammonia water dropwise, continue to stir for more than 2 hours, and then age for more than 6 hours. Wash the precipitate with deionized water until the conductivity is less than 20us / cm, then wash with alcohol, and dry the precipitate to constant weight. The obtained hydroxide powder was calcined at 800°C for more than 2 hours to obtain...

Embodiment 3

[0044] Prepared InGaZnO with the synthetic technique of embodiment 1 4 The powder is 1000g, and the PVA solution with a concentration of 3wt% is used as a binder. Add 10g of binder to the powder for granulation, and use a circular stainless steel mold with a diameter of 100mm to mold it to prepare a green body with a thickness of 5mm. The molded green body is degreased at 600°C for 6h, and then sintered at 1450°C for 6h after degreasing. The sintering atmosphere is air. The density of the sintered body is 97.5%, and the resistivity is 9.5×10 -2 ? cm. The X-ray diffraction spectrum of the target is as Figure 5 shown.

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Abstract

The invention provides an indium-gallium-zinc oxide powder and a preparation method of a ceramic target thereof. The indium-gallium-zinc oxide powder comprises indium, gallium, zinc and oxygen, and the indium-gallium-zinc oxide powder is expressed as a composition formula x(In2O3)-y(Ga2O3)-z(ZnO). In the formula, x is smaller than 3.5 and greater than 0.5, and y / z is smaller than 2.0 and greater than 0.5. The preparation method is characterized by comprising the following steps: preparing raw materials including indium, the gallium and the zinc into clear liquor, adding the precipitator to produce precipitate, and calcining after washing, filtering and drying to obtain the mono-dispersed nano-scale IGZO powder; and preparing the ceramic target by adopting the synthetic IGZO powder as the raw material, adding the adhesive for granulating, carrying out compression molding or cold isostatic pressure strengthening to obtain the green body, degreasing the green body in a high-temperature furnace, and sintering the degreased green body at a high temperature. Because of adoption of the steps, the IGZO ceramic target which has high density and low resistivity is obtained, and the formations of the paradoxical discharge and knots on the surface of the ceramic target can be prevented.

Description

technical field [0001] The invention relates to a semiconductor optoelectronic material, in particular to a method for preparing an indium gallium zinc oxide powder and a ceramic target material thereof. Background technique [0002] In recent years, with the marketization of organic light-emitting displays (OLEDs), the size of liquid crystal displays (LCDs) continues to increase, the emergence of ultra-fine displays, and the development of fully transparent displays in the future. The development of these active-matrix flat-panel display technologies requires that the core device of the drive-thin-film transistor (TFT) must have more excellent electrical properties than the existing TFT made of amorphous silicon (a-Si) or low-temperature polysilicon (LTPS) materials. , optical performance and semiconductor processing performance. Oxide semiconductor thin films have good low-temperature growth properties, simple preparation process requirements, high mobility and light tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00C01G9/02C04B35/00C04B35/622
Inventor 许积文王华张小文
Owner 广州市尤特新材料有限公司
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