48results about How to "Reduce abnormal discharge" patented technology

An electrically conductive, plasma-resistant member adapted for exposure to a halogen-based gas plasma atmosphere includes a substrate having formed on at least part of a region thereof to be exposed to the plasma a thermal spray coating composed of yttrium metal or yttrium metal in admixture with yttrium oxide and/or yttrium fluoride so as to confer electrical conductivity. Because the member is conductive and has an improved erosion resistance to halogen-based corrosive gases or plasmas thereof, particle contamination due to plasma etching when used in semiconductor manufacturing equipment or flat panel display manufacturing equipment can be suppressed.

The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.

Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga₂O₃)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga₂O₃)/zinc oxide (ZnO) sputtering target (GZO target) improves the conductivity and bulk density of the target by adding trace amounts of specific elements. In other words, it is possible to obtain a target capable of increasing the sintered density, inhibiting the formation of nodules, and preventing the generation of abnormal electrical discharge and particles by improving the component composition. Further, provided are a method of forming a transparent conductive film with the use of the target, and a transparent conductive film formed thereby.

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

Disclosed is a high-density gallium oxide-zinc oxide sintered body sputtering target for forming a transparent conductive film. This sputtering target is characterized by containing 20-2000 mass ppm of zirconium oxide. By adding a small amount of a specific element to a gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO type target) for forming a transparent conductive film, the conductivity and bulk density of the target can be improved. In other words, it is disclosed a sputtering target wherein the sintering density is improved and formation of nodules is suppressed by improving the components composition, thereby preventing abnormal discharge and formation of particles. Also disclosed are a method for forming a transparent conductive film by using such a target, and a transparent conductive film formed by such a method.

A plasma CVD apparatus comprising a vacuum chamber, and a main roll and a plasma generation electrode in the vacuum chamber, wherein a thin film is formed on a surface of a long substrate which is conveyed along the surface of the main roll is provided. At least one side wall extending in transverse direction of the long substrate is provided on each of the upstream and downstream sides in the machine direction of the long substrate, and the side walls surrounds the film deposition space between the main roll and the plasma generation electrode. The side walls are electrically insulated from the plasma generation electrode. The side wall on either the upstream or the downstream side in the machine direction of the long substrate is provided with at least one raw of gas supply holes formed by gas supply holes aligned in the transverse direction of the long substrate.

A ferromagnetic sputtering target having a composition comprising 5 to 50 mol % of Pt, 5 to 15 mol % of SiO₂, 0.05 to 0.60 mol % of Sn, and Fe as the balance, wherein the Sn is contained in SiO₂ grains (B) dispersed in a metal base (A). Provided is a nonmagnetic grain-dispersed ferromagnetic sputtering target which can suppress abnormal electric discharge of the oxide that may cause particle generation during sputtering.

The invention discloses a sputtering target material, comprising a plurality of first sub-blocks and a plurality of second sub-blocks, wherein the plurality of first sub-blocks and the plurality of second sub-blocks are distributed in a plurality of rows and columns; the first sub-blocks and the second sub-blocks in each row are distributed in a staggered manner; and the first sub-blocks and the second sub-blocks in each column are also distributed in the staggered manner. A sputtering device comprising the sputtering target material is also disclosed by the invention; the sputtering device comprises an alternating current power supply; the alternating current power supply comprises a first electrode and a second electrode, of which the polarities are opposite; each first sub-block of the sputtering target material is correspondingly connected with the first electrode of the alternating current power supply; and each second sub-block of the sputtering target material is correspondingly connected to the second electrode of the alternating current power supply. The sputtering target material is designed into blocks, so that the target material is fully utilized, and a product membrane has good uniformity.

A sputtering target characterized by further containing 0.1 to 20wt% (in terms of the weight of oxide) of a metal which can form a low-melting oxide having a melting point of up to 1000°C relative to an elemental composition which has an Al content of 0.2 to 3.0mol% in terms of Al2O3 and a content of Mg and/or Si of 1 to 27mol% in terms of MgO and/or SiO2 with the balance being Zn in an amount in terms of ZnO. The present invention provides: a target which is free from sulfur and has such a low bulk resistance as to permit DC sputtering and which is useful in forming an optical thin film having a low refractive index; and a process for manufacturing the same. The target itself has a high density and therefore enables stable sputtering with little abnormal discharge. A thin film formed by a sputtering method using the target exhibits a high transmittance and is composed of a sulfur-free system, so that a reflecting or recording layer adjacent to the thin film is less susceptible to degradation. Thus, the target is useful in forming a thin film for an optical information recording medium. The sputtering target can improve the characteristics of an optical information recording medium, reduce the facility cost, and enhance the speed of film formation, thus achieving a remarkably improved throughput.