50results about How to "Reduce abnormal discharge" patented technology

An electrically conductive, plasma-resistant member adapted for exposure to a halogen-based gas plasma atmosphere includes a substrate having formed on at least part of a region thereof to be exposed to the plasma a thermal spray coating composed of yttrium metal or yttrium metal in admixture with yttrium oxide and / or yttrium fluoride so as to confer electrical conductivity. Because the member is conductive and has an improved erosion resistance to halogen-based corrosive gases or plasmas thereof, particle contamination due to plasma etching when used in semiconductor manufacturing equipment or flat panel display manufacturing equipment can be suppressed.

Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula:In / (In+Ga+Zn)<0.75

Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Provided is a plasma CVD apparatus that is a vacuum film formation apparatus provided with a main roll and a plasma generating electrode in a vacuum container, and forming a thin film on a surface of an elongated base material while transporting the elongated base material along a surface of the main roll, wherein at least one side wall extending in the width direction of the elongated base material is provided on each of an upstream side and a downstream side in the transportation direction of the elongated base material and sandwiches a film forming space so as to surround the film forming space sandwiched between the main roll and the plasma generating electrode, the side walls are electrically insulated from the plasma generating electrode, and at least one row of a gas supply hole row that forms a plurality of gas supply holes aligning in the width direction of the elongated base material is provided on either one of the side walls on the upstream side and the downstream side of the transportation direction of the elongated base material.

This Cu-Ga alloy sputtering target has a component composition containing 0.1-40.0% (atom basis) of Ga with the remainder made up by Cu and unavoidable impurities, wherein the porosity of the target is 3.0% or less, the average diameter of inscribed circles of the pores is 150 [mu]m or less, and the average crystal grain diameter of Cu-Ga alloy grains is 50 [mu]m or less.

The present invention provides an Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al-(Ni, Co)-(Cu, Ge)-(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

The present invention provides a high-density gallium oxide-zinc oxide based sintered body sputtering target for forming a transparent conductive film, characterized in that it contains 20 to 2000 mass ppm of zirconia. Adding a trace amount of prescribed elements to gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO system target) can improve its electrical conductivity and target volume density, that is, improve the composition, increase the sintering density, and suppress The formation of nodules prevents the occurrence of abnormal discharge and particles. While obtaining such a target, the present invention also provides a method for forming a transparent conductive film using the target and the transparent conductive film formed thereby.

The present invention provides a copper alloy target for welding electrode film formation capable of forming a copper alloy film at a low price. The sputtering film formation of the copper alloy film does not change color like pure copper film formation, and even after a After treatment with inactive flux, it also shows good solderability and has excellent solder wettability. The copper alloy target for welding electrode film formation according to the present invention contains copper as a main component, contains silver in a ratio of more than 10 mass % to less than 25 mass %, and contains nickel in a ratio of 0.1 mass % to 3 mass %. The copper alloy target is preferably produced in the following manner: after vacuumizing the sealable cavity to below 0.01Pa, introducing an inert gas, adjusting the pressure in the cavity to not less than 50Pa and not more than 90000Pa, and carrying out vacuuming of the metal material. Melting and casting.

The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low.

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

The invention provides an indium-gallium-zinc oxide powder and a preparation method of a ceramic target thereof. The indium-gallium-zinc oxide powder comprises indium, gallium, zinc and oxygen, and the indium-gallium-zinc oxide powder is expressed as a composition formula x(In2O3)-y(Ga2O3)-z(ZnO). In the formula, x is smaller than 3.5 and greater than 0.5, and y / z is smaller than 2.0 and greater than 0.5. The preparation method is characterized by comprising the following steps: preparing raw materials including indium, the gallium and the zinc into clear liquor, adding the precipitator to produce precipitate, and calcining after washing, filtering and drying to obtain the mono-dispersed nano-scale IGZO powder; and preparing the ceramic target by adopting the synthetic IGZO powder as the raw material, adding the adhesive for granulating, carrying out compression molding or cold isostatic pressure strengthening to obtain the green body, degreasing the green body in a high-temperature furnace, and sintering the degreased green body at a high temperature. Because of adoption of the steps, the IGZO ceramic target which has high density and low resistivity is obtained, and the formations of the paradoxical discharge and knots on the surface of the ceramic target can be prevented.