Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film

A technology of transparent conductive film and gallium oxide, which is applied in the direction of sputtering plating, conductive layer on insulating carrier, circuit, etc., can solve the problems of no effective conductivity of conductive film, disadvantage of manufacturing cost, high price of indium, etc., to achieve Effects of prevention of particle generation, less abnormal discharge, and increased target density

Active Publication Date: 2008-06-25
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive.
It can be said that it is necessary because it sets the use of the optical disc protective film, but in the technology disclosed in this patent document 5, it is mentioned that there is no recognition of its effectiveness as a conductive film and the accompanying conductivity

Method used

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  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film
  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film
  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～6

[0070] Weigh ZrO with an average particle size of 1 μm or less after pulverization by zirconia media 2 Powder and Ga 2 o 3 powder, zinc oxide (ZnO), to make ZrO 2 The powders were 20 mass ppm (Example 1), 50 mass ppm (Example 2), 200 mass ppm (Example 3), 500 mass ppm (Example 4), 1000 mass ppm (Example 5), and 2000 mass ppm ppm (Example 6), and Ga 2 o 3 is 5% by mass, and the remainder is ZnO, then, using zirconia (ZrO 2 ) balls or beads as the crushing medium, which are mixed and finely crushed with a dynamic crushing classifier to obtain a mixed powder raw meal with a median pore diameter of 0.8 μm.

[0071] The raw meal is granulated to obtain a spherical granulated powder. Further, the granulated powder is press-molded, and then CIP (cold isostatic pressing) is performed. Then, the molded body was sintered in an air atmosphere at temperatures of 1400° C., 1450° C., and 1500° C. for 5 hours, respectively, to obtain sintered bodies. This sintered body is ground and ...

Embodiment 7

[0102] Weigh ZrO with an average particle size of 1 μm or less after pulverization with zirconia media 2 Powder 500 mass ppm and Ga 2 o 3 Powder 5% by mass, the balance is zinc oxide (ZnO), then, use zirconia (ZrO 2 ) balls or beads as the crushing medium, which are mixed and finely crushed with a dynamic crushing classifier to obtain a mixed powder raw meal with a median pore diameter of 0.8 μm.

[0103] In the same manner as in Examples 1 to 6, this raw meal was granulated to obtain spherical granulated powder. Further, the granulated powder is press-molded, and then CIP (cold isostatic pressing) is performed. Then, the molded body was sintered at a temperature of 1500° C. for 5 hours in a nitrogen atmosphere to obtain a sintered body.

[0104] This sintered body is ground and cut, and processed into a sputtering target of a predetermined shape.

[0105] Then, the characteristics of the target and the characteristics during sputtering were examined in the same manner as...

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Abstract

Disclosed is a high-density gallium oxide-zinc oxide sintered body sputtering target for forming a transparent conductive film. This sputtering target is characterized by containing 20-2000 mass ppm of zirconium oxide. By adding a small amount of a specific element to a gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO type target) for forming a transparent conductive film, the conductivity and bulk density of the target can be improved. In other words, it is disclosed a sputtering target wherein the sintering density is improved and formation of nodules is suppressed by improving the components composition, thereby preventing abnormal discharge and formation of particles. Also disclosed are a method for forming a transparent conductive film by using such a target, and a transparent conductive film formed by such a method.

Description

technical field [0001] The present invention relates to a kind of gallium oxide (Ga 2 o 3 ) - Zinc oxide (ZnO)-based sputtering target (GZO-based target), method for forming a transparent conductive film using the target, and transparent conductive film formed thereby. Background technique [0002] Conventionally, ITO (indium oxide doped with tin) film, which is a transparent conductive film, is transparent and has excellent conductivity, and is used in a wide range of applications such as transparent electrodes (films) of display devices such as liquid crystal displays and electroluminescence displays, and solar cells. use. However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive. [0003] From such current situation, there is a proposal to use a GZO film as a substitute for ITO. Since the GZO is based on gallium oxide (Ga 2 o 3 )-zinc oxide (ZnO) as the main component o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/453H01B5/14H01B13/00
Inventor 长田幸三
Owner JX NIPPON MINING & METALS CO LTD
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