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Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film

A technology of transparent conductive film and gallium oxide, applied in sputtering coating, conductive layer on insulating carrier, circuit, etc., can solve the problems of expensive indium, no effective conductivity of conductive film, disadvantage of manufacturing cost, etc. Improves target density, prevents particle generation, and reduces abnormal discharge

Active Publication Date: 2009-10-14
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive.
It can be said that it is necessary because it sets the use of the optical disc protective film, but in the technology disclosed in this patent document 5, it is mentioned that there is no recognition of its effectiveness as a conductive film and the accompanying conductivity

Method used

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  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film
  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film
  • Gallium oxide-zinc oxide sputtering target, method for forming transparent conductive film, and transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～6

[0070] Weigh ZrO with an average particle size of 1 μm or less after pulverization by zirconia media 2 Powder and Ga 2 o 3 powder, zinc oxide (ZnO), to make ZrO 2 The powders were 20 mass ppm (Example 1), 50 mass ppm (Example 2), 200 mass ppm (Example 3), 500 mass ppm (Example 4), 1000 mass ppm (Example 5), and 2000 mass ppm ppm (Example 6), and Ga 2 o 3 is 5% by mass, and the remainder is ZnO, then, using zirconia (ZrO 2 ) balls or beads as the crushing medium, which are mixed and finely crushed with a dynamic crushing classifier to obtain a mixed powder raw meal with a median pore size of 0.8 μm.

[0071] The raw meal is granulated to obtain a spherical granulated powder. Further, the granulated powder is press-molded, and then CIP (cold isostatic pressing) is performed. Then, the molded body was sintered in an air atmosphere at temperatures of 1400° C., 1450° C., and 1500° C. for 5 hours, respectively, to obtain sintered bodies. This sintered body is ground and cut,...

Embodiment 7

[0096] Weigh ZrO with an average particle size of 1 μm or less after pulverization with zirconia media 2 Powder 500 mass ppm and Ga 2 o 3 Powder 5% by mass, the balance is zinc oxide (ZnO), then, use zirconia (ZrO 2 ) balls or beads as the crushing medium, which are mixed and finely crushed with a dynamic crushing classifier to obtain a mixed powder raw meal with a median pore size of 0.8 μm.

[0097] In the same manner as in Examples 1 to 6, this raw meal was granulated to obtain spherical granulated powder. Further, the granulated powder is press-molded, and then CIP (cold isostatic pressing) is performed. Then, the molded body was sintered at a temperature of 1500° C. for 5 hours in a nitrogen atmosphere to obtain a sintered body.

[0098] This sintered body is ground and cut, and processed into a sputtering target of a predetermined shape.

[0099] Then, the characteristics of the target and the characteristics during sputtering were examined in the same manner as in ...

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Abstract

The present invention provides a high-density gallium oxide-zinc oxide based sintered body sputtering target for forming a transparent conductive film, characterized in that it contains 20 to 2000 mass ppm of zirconia. Adding a trace amount of prescribed elements to gallium oxide (Ga2O3)-zinc oxide (ZnO) sputtering target (GZO system target) can improve its electrical conductivity and target volume density, that is, improve the composition, increase the sintering density, and suppress The formation of nodules prevents the occurrence of abnormal discharge and particles. While obtaining such a target, the present invention also provides a method for forming a transparent conductive film using the target and the transparent conductive film formed thereby.

Description

technical field [0001] The present invention relates to a kind of gallium oxide (Ga 2 o 3 ) - Zinc oxide (ZnO)-based sputtering target (GZO-based target), method for forming a transparent conductive film using the target, and transparent conductive film formed thereby. Background technique [0002] Conventionally, ITO (indium oxide doped with tin) film, which is a transparent conductive film, is transparent and has excellent conductivity, and is used in a wide range of applications such as transparent electrodes (films) of display devices such as liquid crystal displays and electroluminescence displays, and solar cells. use. However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive. [0003] From such current situation, there is a proposal to use a GZO film as a substitute for ITO. Since the GZO is based on gallium oxide (Ga 2 o 3 )-zinc oxide (ZnO) as the main component o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/453H01B5/14H01B13/00
Inventor 长田幸三
Owner JX NIPPON MINING & METALS CORP
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