Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film
A technology of transparent conductive film and gallium oxide, applied in sputtering coating, conductive layer on insulating carrier, circuit, etc., can solve problems such as not being a sufficient countermeasure, improving sintering density, not being an effective method, etc. Achieve the effect of suppressing the volume resistance value to be constant, preventing the occurrence of particles, and suppressing the formation of nodules
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[0064] Weigh Al with an average particle size of 1 μm or less after pulverization by zirconia media 2 o 3 Powder and Ga 2 o 3 powder, zinc oxide (ZnO), to make Al 2 o 3 The powders were 20 mass ppm (Example 1), 50 mass ppm (Example 2), 200 mass ppm (Example 3), 500 mass ppm (Example 4), and Ga 2 o 3 is 5% by mass, and the remainder is ZnO, then, using zirconia (ZrO 2 ) balls or beads as the crushing medium, which are mixed and finely crushed with a dynamic crushing classifier to obtain a mixed powder raw meal with a median pore size of 0.8 μm.
[0065] The raw meal is granulated to obtain a spherical granulated powder. Further, the granulated powder is press-molded, and then CIP (cold isostatic pressing) is performed. Then, the molded body was sintered in an oxygen atmosphere at a temperature of 1500° C. for about 4 hours to obtain a sintered body. This sintered body is ground and cut, and processed into a sputtering target of a predetermined shape.
[0066] Then, th...
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