Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film and transparent conductive film

Abstract

Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide. In a gallium oxide(Ga 2 O 3 )-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

Description

technical field [0001] The present invention relates to a kind of gallium oxide (Ga 2 o 3 ) - Zinc oxide (ZnO)-based sputtering target (GZO-based target), method for forming a transparent conductive film using the target, and transparent conductive film formed thereby. Background technique [0002] Conventionally, ITO (indium oxide doped with tin) film, which is a transparent conductive film, is transparent and has excellent conductivity, and is used in a wide range of applications such as transparent electrodes (films) of display devices such as liquid crystal displays and electroluminescence displays, and solar cells. use. However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive. [0003] From such current situation, there is a proposal to use a GZO film as a substitute for ITO. Since the GZO is based on gallium oxide (Ga 2 o 3 )-zinc oxide (ZnO) as the main component o...

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Problems solved by technology

However, the problem with this ITO is that it is at a disadvantage in terms of manufacturing cost because indium, which is the main component, is expensive.

However, even with such additives, there are problems that the sintered density cannot be sufficiently increased and the bulk resistance value is high.

[0017] In addition, there is an improvement in the manufacturing process of the target. The complicated manufacturing process is the main cause of the increase in cost, and when the density is increased by improving the sintering method or device, there is a problem that the equipment needs to be enlarged, which cannot be said in the industry. is an effective method

[0018] In general, adding trace elements, that is, changing the composition of the GZO sintered body, is a simple and effective method for increasing the density of the target, preventing the formation of nodules, suppressing abnormal discharge phenomena, and generating particles. The volume resistance value of the target will be deteriorated, and the sintered density may not necessarily be improved, so the examples shown in the above patent documents cannot be said to be sufficient countermeasures.

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